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PDF CA3096A Data sheet ( Hoja de datos )
| Número de pieza | CA3096A | |
| Descripción | NPN/PNP Transistor Arrays | |
| Fabricantes | Intersil | |
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CA3096, CA3096A,
CA3096C
December 1997
NPN/PNP Transistor Arrays
Applications
• Five-Independent Transistors
- Three NPN and
- Two PNP
• Differential Amplifiers
• DC Amplifiers
• Sense Amplifiers
• Level Shifters
• Timers
• Lamp and Relay Drivers
• Thyristor Firing Circuits
• Temperature Compensated Amplifiers
• Operational Amplifiers
Ordering Information
PART NUMBER
(BRAND)
CA3096AE
CA3096AM
(3096A)
CA3096AM96
(3096A)
CA3096CE
CA3096E
CA3096M
(3096)
CA3096M96
(3096)
TEMP.
RANGE (oC)
PACKAGE
-55 to 125 16 Ld PDIP
-55 to 125 16 Ld SOIC
PKG.
NO.
E16.3
M16.15
-55 to 125
-55 to 125
-55 to 125
-55 to 125
16 Ld SOIC Tape
and Reel
16 Ld PDIP
16 Ld PDIP
16 Ld SOIC
M16.15
E16.3
E16.3
M16.15
-55 to 125 16 Ld SOIC Tape M16.15
and Reel
Pinout
CA3096, CA3096A, CA3096C
(PDIP, SOIC)
TOP VIEW
1 16 SUBSTRATE
2
Q1
3
4
15
Q5 14
13
5 Q2
12
6 Q4 11
7 10
8 Q3
9
Description
The CA3096C, CA3096, and CA3096A are general purpose
high voltage silicon transistor arrays. Each array consists of
five independent transistors (two PNP and three NPN types)
on a common substrate, which has a separate connection.
Independent connections for each transistor permit maxi-
mum flexibility in circuit design.
Types CA3096A, CA3096, and CA3096C are identical, except
that the CA3096A specifications include parameter matching
and greater stringency in ICBO, ICEO, and VCE(SAT). The
CA3096C is a relaxed version of the CA3096.
CA3096, CA3096A, CA3096C
Essential Differences
CHARACTERISTIC
V(BR)CEO (V) (Min)
NPN
PNP
V(BR)CBO (V) (Min)
NPN
PNP
hFE at 1mA
NPN
PNP
hFE at 100µA
PNP
ICBO (nA) (Max)
NPN
PNP
ICEO (nA) (Max)
NPN
PNP
VCE SAT (V) (Max)
NPN
|VIO| (mV) (Max)
NPN
PNP
|IIO| (µA) (Max)
NPN
PNP
CA3096A CA3096
35 35
-40 -40
45 45
-40 -40
150-500
20-200
150-500
20-200
40-250
40-250
40 100
-40 -100
100
-100
1000
-1000
0.5 0.7
5-
5-
0.6 -
0.25 -
CA3096C
24
-24
30
-24
100-670
15-200
30-300
100
-100
1000
-1000
0.7
-
-
-
-
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
1
File Number 595.4
1 page  
CA3096, CA3096A, CA3096C
Typical Applications (Continued)
3
NTC
SENSOR
10kΩ
120VAC
2
Q1
1
100µF
12V
+
-
10 13
11 Q4 Q5
12 15
6.8kΩ
2W
Q3
78
9 16
RP
5.1kΩ
10kΩ
14
5
10kΩ
5.1kΩ
1kΩ
G
MT1
T2300B
MT2
6
Q2 LOAD
4
FIGURE 3. LINE-OPERATED LEVEL SWITCH USING CA3096A OR CA3096
+6V
13
Q5
14
15
11
40841
MOSFET
10
Q4 1kΩ
12
50MΩ
5µF
20kΩ
5kΩ 5kΩ
36
1 Q1 Q2 5
24
20kΩ 9
OUTPUT
8 Q3
7
1kΩ
3.9kΩ
10kΩ
TIME DELAY CHANGES ±7%
FOR SUPPLY VOLTAGE CHANGE OF ±10%
16
FIGURE 4. ONE-MINUTE TIMER USING CA3096A AND A MOSFET
V+
VT
=
±
-----3---6------
IO RL
IF IO = 1mA AND RL = 1kΩ
VT = ± 36mV
1kΩ
12
Q4
10
VIN 1
100Ω
3
Q1
2
1kΩ
8
RL 1kΩ
11
15
14 Q5
13 6
Q2
4
9 IO
Q3 1kΩ
7
2kΩ
100Ω
5
V-
EO
+VT
VIN
-VT
EO
0
FIGURE 5. CA3096A SMALL-SIGNAL ZERO VOLTAGE DETECTOR HAVING NOISE IMMUNITY
5
t
t
5 Page 
CA3096, CA3096A, CA3096C
Typical Performance Curves (Continued)
6
gIE
bIE
5
IC = 10mA
4
3 100µA
10µA
1mA
2
10mA
1mA
1 100µA
0 10µA
1 10 100
FREQUENCY (MHz)
FIGURE 33. INPUT ADMITTANCE vs FREQUENCY
2.5 IC = 1mA
bOE
2.0
100µA
1.5 bOE
1.0 1mA
gOE
100µA
0.5 gOE
0
1 10 100
FREQUENCY (MHz)
FIGURE 34. OUTPUT ADMITTANCE vs FREQUENCY
30
RSOURCE = 500Ω
30
RSOURCE = 1kΩ
20
IC = 1mA
10µA
10
100µA
20
IC = 1mA
10µA
10
100µA
0
0.01
0.1 1.0
10
FREQUENCY (kHz)
100
FIGURE 35. NOISE FIGURE vs FREQUENCY (PNP)
40
RSOURCE = 10kΩ
30
IC = 1mA
20
0
0.01
0.1 1
FREQUENCY (kHz)
10
100
FIGURE 36. NOISE FIGURE vs FREQUENCY (PNP)
8
VCE = 5V
7
6
100µA
10
5
0
0.01
10µA
0.1
1.0
FREQUENCY (kHz)
10
100
FIGURE 37. NOISE FIGURE vs FREQUENCY (PNP)
4
0.1 1.0
COLLECTOR CURRENT (mA)
10
FIGURE 38. GAIN-BANDWIDTH PRODUCT vs COLLECTOR
CURRENT (PNP)
11
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet CA3096A.PDF ] | |
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