(PDF) CEU3070 Datasheet - N-Channel Enhancement Mode Field Effect Transistor

Número de pieza	CEU3070
Descripción	N-Channel Enhancement Mode Field Effect Transistor
Fabricantes	CET
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No Preview Available ! CED3070/CEU3070 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 62A, RDS(ON) = 9.5mΩ @VGS = 10V. RDS(ON) = 13.5mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(I-PAK) G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM PD 30 ±20 62 240 60 0.48 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 2.1 50 Units V V A A W W/ C C Units C/W C/W Details are subject to change without notice . 1 Rev 2. 2006.Nov http://www.cetsemi.com 1 page

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PDF CEU3070 Data sheet ( Hoja de datos )