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PDF CEP04N7 Data sheet ( Hoja de datos )
| Número de pieza | CEP04N7 | |
| Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | CET | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de CEP04N7 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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CEP04N7/CEB04N7
CEI04N7/CEF04N7
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Type
CEP04N7
CEB04N7
CEI04N7
CEF04N7
VDSS
700V
700V
700V
700V
RDS(ON)
3.5Ω
3.5Ω
3.5Ω
3.5Ω
ID @VGS
4A 10V
4A 10V
4A 10V
4A d 10V
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole.
G
D
D
G
S
CEB SERIES
TO-263(DD-PAK)
G
D
S
CEI SERIES
TO-262(I2-PAK)
G
D
S
CEP SERIES
TO-220
G
D
S
CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
TO-220/263/262 TO-220F
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS
VGS
ID
IDM e
PD
700
±30
4
12
89
0.71
4d
12 d
35
0.28
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
1.4
62.5
3.6
65
Units
V
V
A
A
W
W/ C
C
Units
C/W
C/W
2005.April
4 - 18
http://www.cetsemi.com
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet CEP04N7.PDF ] | |
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