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PDF FGP7N60RUFD Data sheet ( Hoja de datos )
| Número de pieza | FGP7N60RUFD | |
| Descripción | RUF IGBT CO-PAK | |
| Fabricantes | Fairchild Semiconductor | |
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October 2006
FGP7N60RUFD
600V, 7A RUF IGBT CO-PAK
Features
• High speed switching
• Low saturation voltage : VCE(sat) = 1.95 V @ IC = 7A
• High input impedance
• CO-PAK, IGBT with FRD : trr = 50 ns (typ.)
• Short Circuit rated, 10us @ TC=100°C, VGE=15V, VCE=300V
Applications
Motor controls and general purpose inverters.
Description
Fairchild's Insulated Gate Bipolar Transistors (IGBTs) provides
low conduction and switching losses.The device is designed for
Motor applications where ruggedness is a required feature.
1 TO-220
1.Gate 2.Collector 3.Emitter
Absolute Maximum Ratings
Symbol
Description
VCES
VGES
IC
ICM (1)
IF
IFM
PD
TJ
Tstg
TL
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
@ TC = 25°C
@ TC = 100°C
Diode Continuous Forward Current
Diode Maximum Forward Current
@ TC = 100°C
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25°C
@ TC = 100°C
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJC(DIODE)
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
©2005 Fairchild Semiconductor Corporation
FGP7N60RUFD Rev. A
1
C
G
E
FGP7N60RUFD
600
± 20
14
7
21
12
60
69
28
-55 to +150
-55 to +150
300
Units
V
V
A
A
A
A
A
W
W
°C
°C
°C
Typ.
--
--
--
Max.
1.8
3.0
62.5
Units
°C/W
°C/W
°C/W
www.fairchildsemi.com
1 page  
Typical Performance Characteristics (Continued)
Figure 7. Capacitance Characteristics
Temperature at Variant Current Level
1000
800
Ciss
Common Emitter
VGE = 0V, f = 1MHz
TC = 25oC
600
Figure 8. Turn-On Characteristics vs. Gate
Resistance
Ton
100 Tr
400 Coss
Crss
200
0
1 10
Collector-Emitter Voltage, VCE [V]
Figure 9. Turn-Off Characteristics vs.
Gate Resistance
1000
Common Emitter
VCC = 300V, VGE = +/-15V
IC = 7A
Tc = 25oC
Tc = 125oC
Toff
Tf
Toff
Tf
100
10
Gate Resistance, RG [Ω ]
100
Figure 11. Turn-On Characteristics vs.
Collector Current
200
150
100
Common Emitter
VGE = +/-15V, RG=30Ω
IC = 7A
Tc = 25oC
Tc = 125oC
Ton
Tr
50
Com m on Em itter
VCC = 300V, VGE = +/-15V
IC = 7A
T c = 25oC
T c = 125oC
10
10
G ate R esistance, R G [Ω ]
100
Figure 10. Switching Loss vs. Gate Resistance
600
500
400
300
C om m on E m itter
VCC = 300V, VGE = +/-15V
IC = 7A
T c = 25oC
T c = 125oC
200
Eon
E o ff
Eon
100
E o ff
10 100
G ate R esistance, R G [Ω ]
Figure 12. Turn-Off Characteristics vs.
Collector Current
1000
800
600
Com m on Em itter
VGE = +/-15V, RG=30Ω
IC = 7A
Tc = 25oC
Tc = 125oC
400
Toff
Tf
Toff
200 Tf
4 6 8 10 12 14
Collector Current, IC [A]
4 6 8 10 12 14
Collector C urrent, IC [A]
FGP7N60RUFD Rev. A
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet FGP7N60RUFD.PDF ] | |
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