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PDF FGD3N60LSD Data sheet ( Hoja de datos )
| Número de pieza | FGD3N60LSD | |
| Descripción | IGBT | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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FGD3N60LSD
IGBT
Features
• High Current Capability
• Very Low Saturation Voltage : VCE(sat) = 1.2 V @ IC = 3A
• High Input Impedance
Applications
• HID Lamp Applications
• Piezo Fuel Injection Applications
September 2006
tm
Description
Fairchild's Insulated Gate Bipolar Transistors (IGBTs) provide
very low conduction losses. The device is designed for applica-
tions where very low On-Voltage Drop is a required feature.
C
C
G E D-PAK
G
E
Absolute Maximum Ratings
Symbol
Description
VCES
VGES
IC
ICM (1)
IF
I FM
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Continous Forward Current
Diode Maximum Forward Current
@ TC = 25°C
@ TC = 100°C
(1)
@ TC = 100°C
PD Maximum Power Dissipation
Derating Factor
@ TC = 25°C
TJ Operating Junction Temperature
Tstg Storage Temperature Range
TL Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
FGD3N60LSD
600
± 25
6
3
25
3
25
40
0.32
-55 to +150
-55 to +150
250
Symbol
Parameter
RθJC (IGBT) Thermal Resistance, Junction-to-Case
RθJA
Thermal Resistance, Junction-to-Ambient (PCB Mount) (2)
Notes :
(2) Mounted on 1” squre PCB (FR4 or G-10 Material)
Typ.
--
--
Max.
3.1
100
Units
V
V
A
A
A
A
A
W
W/°C
°C
°C
°C
Units
°C/W
°C/W
©2006 Fairchild Semiconductor Corporation
FGD3N60LSD Rev. B
1
www.fairchildsemi.com
1 page  
Typical Performance Characteristics (Continued)
Figure 7. Gate Charge
Figure 8. Turn-On Characteristics vs. Gate
Resistance
12
Common Emitter
RL = 160Ω
10 Vcc = 480V
TC = 25°C
8
1000
Com m on Em itter
VCC = 480V, VGE = 10V
IC = 3A
TC = 25°C
TC = 125°C
6 100 Ton
4 Tr
2
0
0 2 4 6 8 10
Gate Charge, Qg [nC]
Figure 9. Turn-Off Characteristics vs.
Gate Resistance
10000
Common Emitter
VCC = 480V, VGE = 10V
IC = 3A
TC = 25°C
TC = 125°C
1000
12
Toff
Tf
100
200 400 600 800 1000
Gate Resistance, RG [Ω ]
Figure 11. Turn-On Characteristics vs.
Collector Current
10
200 400 600 800 1000
Gate R esistance, R G [Ω ]
Figure 10. Switching Loss vs. Gate Resistance
10000
1000
Eoff
Eon
100
Com m on Em itter
VCC = 480V, VGE = 10V
IC = 3A
TC = 25°C
TC = 125°C
10
200 400 600 800 1000
Gate Resistance, RG [Ω]
Figure 12. Turn-Off Characteristics vs.
Collector Current
Common Emitter
Vcc = 480V, VGE = 10V
RG = 470Ω
100 TC = 25°C
TC = 125°C
Ton
Tr
1000
Toff
Tf
10
2
3
Collector Current, IC [A]
4
100
2
Common Emitter
Vcc = 480 V, VGE = 10V
RG = 470Ω
TC = 25°C
TC = 125°C
Collector Curren3t, IC [A]
4
FGD3N60LSD Rev. B
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet FGD3N60LSD.PDF ] | |
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