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PDF CEM3259 Data sheet ( Hoja de datos )

Número de pieza CEM3259
Descripción Dual Enhancement Mode Field Effect Transistor
Fabricantes CET 
Logotipo CET Logotipo



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CEM3259
Dual Enhancement Mode Field Effect Transistor (N and P Channel)
FEATURES
30V, 7.6A, RDS(ON) = 22m@VGS = 10V.
RDS(ON) = 32m@VGS = 4.5V.
-30V, -5.9A, RDS(ON) = 36m@VGS = -10V.
RDS(ON) = 52m@VGS = -4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
Surface mount Package.
SO-8
1
D1 D1 D2 D2
87 65
1234
S1 G1 S2 G2
5
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
N-Channel
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
VDS 30
VGS ±20
ID 7.6
IDM 30
P-Channel
-30
±20
-5.9
25
Maximum Power Dissipation
PD 2.0
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Units
V
V
A
A
W
C
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient b
Symbol
RθJA
Limit
62.5
Units
C/W
Details are subject to change without notice .
1
Rev 2. 2007.Jan
http://www.cetsemi.com

1 page




CEM3259 pdf
P-CHANNEL
30
24
18
-VGS=10,8,6V
-VGS=4V
12
6
0
0 0.5
1 1.5
-VGS=3V
2 2.5
3
-VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
1500
1250
Ciss
1000
750
500
250 Coss
Crss
0
0 5 10 15 20 25
-VDS, Drain-to-Source Voltage (V)
Figure 3. Capacitance
1.3 VDS=VGS
1.2 ID=-250µA
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
5
CEM3259
10
8
6
4
25 C
2
TJ=125 C
-55 C
0
0123456
-VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
2.2 ID=-5.9A
1.9 VGS=-10V
1.6
1.3
1.0
0.7
0.4
-100 -50 0 50 100 150 200
TJ, Junction Temperature( C)
Figure 4. On-Resistance Variation
with Temperature
VGS=0V
101
100
10-1
0.4 0.6 0.8 1.0 1.2 1.4
-VSD, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current

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