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Número de pieza | CEG8205 | |
Descripción | Dual N-Channel Enhancement Mode Field Effect Transistor | |
Fabricantes | CET | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de CEG8205 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! CEG8205
Dual N-Channel Enhancement Mode Field Effect Transistor
FEATURES
20V, 4.5A, RDS(ON) = 30mΩ @VGS = 4.5V.
RDS(ON) = 40mΩ @VGS = 2.5V.
Super High dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TSSOP-8 for Surface Mount Package.
G2
S2
S2
D
TSSOP-8
G1
S1
S1
D
D1
S1 2
S1 3
G1 4
8D
7 S2
6 S2
5 G2
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
VDS 20
VGS ±10
ID 4.5
IDM 25
Maximum Power Dissipation
PD 1.0
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient b
Symbol
RθJA
Limit
125
Units
V
V
A
A
W
C
Units
C/W
2002.December
8 - 14
http://www.cetsemi.com
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet CEG8205.PDF ] |
Número de pieza | Descripción | Fabricantes |
CEG8205 | Dual N-Channel Enhancement Mode Field Effect Transistor | CET |
CEG8205A | Dual N-Channel Enhancement Mode Field Effect Transistor | CET |
CEG8208 | Dual N-Channel Enhancement Mode Field Effect Transistor | CET |
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