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PDF FQPF10N60CF Data sheet ( Hoja de datos )
| Número de pieza | FQPF10N60CF | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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FQP10N60CF / FQPF10N60CF
600V N-Channel MOSFET
February 2007
FRFET TM
Features
• 9A, 600V, RDS(on) = 0.8Ω @VGS = 10 V
• Low gate charge ( typical 44 nC)
• Low Crss ( typical 18 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
ciency switched mode power supplies, active power factor cor-
rection, electronic lamp ballasts based on half bridge topology.
D
GDS
TO-220
FQP Series
Absolute Maximum Ratings
GD S
TO-220F
FQPF Series
www.DataSheet4U.com
G
S
Symbol
Parameter
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL Maximum lead temperature for soldering purposes,
1/8 from case for 5 seconds
* Drain current limited by maximum junction temperature.
Thermal Characteristics
FQP10N60CF FQPF10N60CF
600
9.0 9.0 *
5.7 5.7 *
36 36 *
± 30
583
9.0
16.9
4.5
169 50
1.35 0.4
-55 to +150
300
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
FQP10N60CF FQPF10N60CF
0.74 2.5
62.5 62.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
©2006 Fairchild Semiconductor Corporation
FQP10N60CF / FQPF10N60CF Rev. A
1
www.fairchildsemi.com
1 page  
Typical Performance Characteristics (Continued)
Figure 11-1. Transient Thermal Response Curve for FQP10N60CF
100
D=0.5
0.2
10-1
0.1
0.05
0.02
0.01
10-2
single pulse
PDM
t1
t2
* Notes :
1. Z (t) = 0.74 0C/W
? JC
2. Duty Factor, D=t /t
12
3. T - T = P * Z (t)
JM C
DM ? JC
10-5
10-4
10-3
10-2
10-1
100
101
t , Square Wave Pulse Duration [sec]
1
Figure 11-2. Transient Thermal Response Curve for FQPF10N60CF
100 D=0.5
0.2
0.1
0.05
10-1
0.02
0.01
10-2
single pulse
PDM
t1
t2
* Notes :
1. Z (t) = 2.5 0C/W
? JC
2. Duty Factor, D=t /t
12
3. T - T = P * Z (t)
JM C
DM ? JC
10-5
10-4
10-3
10-2
10-1
100
101
t , Square Wave Pulse Duration [sec]
1
FQP10N60CF / FQPF10N60CF Rev. A
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet FQPF10N60CF.PDF ] | |
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