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PDF FQP10N50CF Data sheet ( Hoja de datos )

Número de pieza FQP10N50CF
Descripción N-Channel MOSFET
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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FQP10N50CF / FQPF10N50CF
500V N-Channel MOSFET
December 2006
FRFETTM
Features
• 10A, 500V, RDS(on) = 0.61 @VGS = 10 V
• Low gate charge (typical 43 nC)
• Low Crss (typical 16pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Fast recovery body diode
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
cient switched mode power supplies and active power factor
correction.
D
G
GDS
TO-220
FQP Series
GD S
TO-220F
FQPF Series
S
Absolute Maximum Ratings
www.DataSheet4U.com
Symbol
Parameter
VDSS
ID
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM Drain Current - Pulsed
(Note 1)
VGSS
EAS
IAR
EAR
dv/dt
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 2)
(Note 1)
(Note 1)
(Note 3)
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
FQP10N50CF FQPF10N50CF
500
10 10*
6.35 6.35*
40 40*
± 30
388
10
14.3
4.5
143 48
1.14 0.38
-55 to +150
300
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Symbol
Parameter
RθJC
RθJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
FQP10N50CF
0.87
62.5
FQPF10N50CF
2.58
62.5
Unit
°C/W
°C/W
© 2006 Fairchild Semiconductor Corporation
FQP10N50CF / FQPF10N50CF Rev. A
1
www.fairchildsemi.com

1 page




FQP10N50CF pdf
Typical Performance Characteristics (Continued)
Figure 11-1. Transient Thermal Response Curve for FQP10N50CF
100
D=0.5
0.2
10-1 0.1
0.05
0.02
0.01
10-2
single pulse
PDM
t1
t2
* Notes :
1. Z? JC(t) = 0.87 0C/W
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * Z? JC(t)
10-5
10-4
10-3
10-2
10-1
100
101
t1, Square Wave Pulse Duration [sec]
Figure 11-2. Transient Thermal Response Curve for FQPF10N50CF
D=0.5
100
0.2
0.1
0.05
10-1
0.02
0.01
10-2 single pulse
PDM
t1
t2
* Notes :
1. Z? JC(t) = 2.58 0C/W
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * Z? JC(t)
10-5
10-4
10-3
10-2
10-1
100
101
t1, Square Wave Pulse Duration [sec]
FQP10N50CF / FQPF10N50CF Rev. A
5
www.fairchildsemi.com

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