DataSheet.es    


PDF FGFP90N30 Data sheet ( Hoja de datos )

Número de pieza FGFP90N30
Descripción PDP IGBT
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



Hay una vista previa y un enlace de descarga de FGFP90N30 (archivo pdf) en la parte inferior de esta página.


Total 7 Páginas

No Preview Available ! FGFP90N30 Hoja de datos, Descripción, Manual

FGPF90N30
300V, 90A PDP IGBT
Features
• High Current Capability
• Low saturation voltage: VCE(sat) =1.5V @ IC = 60A
• High Input Impedance
• Fast switch
• RoHS Complaint
Application
. PDP System
October 2006
tm
Description
Employing Unified IGBT Technology, Fairchild's PDP IGBTs
provides low conduction and switching loss. FGPF90N30 offers
the optimum solution for PDP applications where low-condution
loss is essential.
TO-220F
1
1.Gate 2.Collector 3.Emitter
Absolute Maximum Ratings
www.DataSheet4U.com
Symbol
VCES
VGES
IC pulse(1)
PD
TJ
Tstg
TL
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25oC
@ TC = 25oC
@ TC = 100οC
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Notes:
(1)Repetitive test , pluse width = 100usec , Duty = 0.1
* Ic_pluse limited by max Tj
FGPF90N30
300
± 30
220
56.8
22.7
-55 to +150
-55 to +150
300
Units
V
V
A
W
W
oC
oC
oC
Typ.
--
--
Max.
2.2
62.5
Units
oC/W
oC/W
©2006 Fairchild Semiconductor Corporation
FGPF90N30 Rev. A
1
www.fairchildsemi.com

1 page




FGFP90N30 pdf
Typical Performance Characteristics (Continued)
Figure 13. Turn-On Characteristics vs.
Collector Current
1000
Figure 14. Turn-Off Characteristics
vs. Collector Current
500
100
tr
td(on)
100
td(off)
tf
10
Common Emitter
VGE = 15V, RG = 10
TC = 25oC
TC = 125oC
1
10 20 30 40 50 60 70 80 90
Collector Current, IC [A]
Figure 15. Switching Loss vs Gate Resistance
Common Emitter
VGE = 15V, RG = 10
TC = 25oC
TC = 125oC
10
10 20 30 40 50 60 70 80 90
Collector Current, IC [A]
Figure 16. Switching Loss vs
Collector Current
1500
1000
2000
1000
Eoff
Eoff
100
0
Common Emitter
Eon VCC = 600V, VGE = 15V
IC = 40A
TC = 25oC
TC = 125oC
10 20 30 40 50 60 70 80 90 100
Gate Resistance, RG []
100
Eon
Common Emitter
VGE = 15V, RG = 10
TC = 25oC
TC = 125oC
10
10 20 30 40 50 60 70 80 90
Collector Current, IC [A]
Figure 17. Transient Thermal Impedance of IGBT
10
1
0 .1
0 .0 1
0 .5
0 .2
0 .1
0 .0 5
0 .0 2
0 .0 1
s in g le p u ls e
1E -3
1 E -5
1 E -4
1E -3
0 .0 1
0 .1
R e c ta n g u la r P u ls e D u ra tio n [s e c ]
Pdm
t1
t2
Duty factor D = t1 / t2
Peak Tj = Pdm × Zthjc + TC
1 10
5 www.fairchildsemi.com
FGPF90N30 Rev. A

5 Page










PáginasTotal 7 Páginas
PDF Descargar[ Datasheet FGFP90N30.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
FGFP90N30PDP IGBTFairchild Semiconductor
Fairchild Semiconductor

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar