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PDF FDW2508PB Data sheet ( Hoja de datos )

Número de pieza FDW2508PB
Descripción Dual P-Channel MOSFET
Fabricantes Fairchild Semiconductor　
Logotipo Fairchild Semiconductor Logotipo



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No Preview Available ! FDW2508PB Hoja de datos, Descripción, Manual

October 2006
FDW2508PB
Dual P-Channel –1.8V Specified PowerTrench® MOSFET
–12V, –6A, 18mΩ
Features
General Description
„ Max rDS(on) = 18mΩ at VGS = –4.5V, ID = –6A
„ Max rDS(on) = 22mΩ at VGS = –2.5V, ID = –5A
„ Max rDS(on) = 30mΩ at VGS = –1.8V, ID = –4A
„ Low gate charge
„ High performance trench technology for extremely low rDS(on)
„ Low profile TSSOP-8 package
„ RoHS compliant
This P-Channel –1.8V specified MOSFET uses Fairchild
Semiconductor’s advanced low voltage PowerTrench®. It has
been optimized for battery power management applications.
Application
„ Power management
„ Load switch
„ Battery protection
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TSSOP8
Pin 1
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Power Dissipation-Dual Operation
Power Dissipation-Single Operation
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
Ratings
–12
±8
–6
–30
2
1.6
1
–55 to +150
Units
V
V
A
W
°C
RθJA
RθJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
80
(Note 1b) 125 °C/W
Device Marking
2508PB
Device
FDW2508PB
Package
TSSOP-8
Reel Size
13’’
Tape Width
12mm
Quantity
2500 units
©2006 Fairchild Semiconductor Corporation
FDW2508PB Rev.B
1
www.fairchildsemi.com

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FDW2508PB Rev.B
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