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Número de pieza | FDS8878 | |
Descripción | N-Channel MOSFET | |
Fabricantes | Fairchild Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de FDS8878 (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
No Preview Available ! June 2005
FDS8878
N-Channel PowerTrench® MOSFET
30V, 10.2A, 14mΩ
Features
rDS(ON) = 14mΩ, VGS = 10V, ID = 10.2A
rDS(ON) = 17mΩ, VGS = 4.5V, ID = 9.3A
High performance trench technology for extremely low
rDS(ON)
Low gate charge
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
rDS(ON) and fast switching speed.
High power and current handling capability
Applications
DC/DC converters
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Branding Dash
1
2
3
4
SO-8
5
54
63
72
81
©2005 Fairchild Semiconductor Corporation
FDS8878 Rev. A1
1
www.fairchildsemi.com
1 page Typical Characteristics TA = 25°C unless otherwise noted
100
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R ≠ 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
10
STARTING TJ = 25oC
STARTING TJ = 150oC
1
0.01
0.1 1 10
tAV, TIME IN AVALANCHE (ms)
100
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 5. Unclamped Inductive Switching
Capability
80
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VDD = 15V
60
TJ = 25oC
40
TJ = 175oC
20
TJ = -55oC
0
2.0
2.5 3.0 3.5 4.0
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 6. Transfer Characteristics
4.5
80
TA = 25oC
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
60
VGS = 10V
VGS = 5V
40
VGS = 3.5V
20
VGS = 3V
0
0 0.2 0.4 0.6
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Saturation Characteristics
0.8
50
40
ID = 10.2A
30
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
20
ID = 1A
10
0
2 4 6 8 10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 8. Drain to Source On Resistance vs Gate
Voltage and Drain Current
1.6
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
1.4
1.2
VGS = VDS, ID = 250µA
1.0
1.2
0.8
1.0
0.8
-80
VGS = 10V, ID = 10.2A
-40 0
40 80 120
TJ, JUNCTION TEMPERATURE (oC)
160
Figure 9. Normalized Drain to Source On
Resistance vs Junction Temperature
0.6
-80
-40 0
40 80 120
TJ, JUNCTION TEMPERATURE (oC)
160
Figure 10. Normalized Gate Threshold Voltage vs
Junction Temperature
FDS8878 Rev. A1
5 www.fairchildsemi.com
5 Page SPICE Thermal Model
REV February 2005
FDS8878T
Copper Area =1.0 in2
CTHERM1 TH 8 2.0e-3
CTHERM2 8 7 5.0e-3
CTHERM3 7 6 1.0e-2
CTHERM4 6 5 4.0e-2
CTHERM5 5 4 9.0e-2
CTHERM6 4 3 2e-1
CTHERM7 3 2 1
CTHERM8 2 TL 3
RTHERM1 TH 8 1e-1
RTHERM2 8 7 5e-1
RTHERM3 7 6 1
RTHERM4 6 5 5
RTHERM5 5 4 8
RTHERM6 4 3 12
RTHERM7 3 2 18
RTHERM8 2 TL 25
SABER Thermal Model
Copper Area = 1.0 in2
template thermal_model th tl
thermal_c th, tl
{
ctherm.ctherm1 th 8 =2.0e-3
ctherm.ctherm2 8 7 =5.0e-3
ctherm.ctherm3 7 6 =1.0e-2
ctherm.ctherm4 6 5 =4.0e-2
ctherm.ctherm5 5 4 =9.0e-2
ctherm.ctherm6 4 3 =2e-1
ctherm.ctherm7 3 2 1
ctherm.ctherm8 2 tl 3
rtherm.rtherm1 th 8 =1e-1
rtherm.rtherm2 8 7 =5e-1
rtherm.rtherm3 7 6 =1
rtherm.rtherm4 6 5 =5
rtherm.rtherm5 5 4 =8
rtherm.rtherm6 4 3 =12
rtherm.rtherm7 3 2 =18
rtherm.rtherm8 2 tl =25
}
RTHERM1
RTHERM2
RTHERM3
RTHERM4
RTHERM5
RTHERM6
RTHERM7
RTHERM8
COMPONANT
CTHERM6
CTHERM7
CTHERM8
RTHERM6
RTHERM7
RTHERM8
0.04 in2
1.2e-1
0.5
1.3
26
39
55
TABLE 1. THERMAL MODELS
0.28 in2
0.52 in2
1.5e-1
2.0e-1
1.0 1.0
2.8 3.0
20 15
24 21
38.7 31.3
th JUNCTION
CTHERM1
8
CTHERM2
7
CTHERM3
6
CTHERM4
5
CTHERM5
4
CTHERM6
3
CTHERM7
2
CTHERM8
tl CASE
0.76 in2
2.0e-1
1.0
3.0
13
19
29.7
1.0 in2
2.0e-1
1.0
3.0
12
18
25
FDS8878 Rev. A1
11 www.fairchildsemi.com
11 Page |
Páginas | Total 12 Páginas | |
PDF Descargar | [ Datasheet FDS8878.PDF ] |
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