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PDF FDMS2734 Data sheet ( Hoja de datos )
| Número de pieza | FDMS2734 | |
| Descripción | N-Channel UltraFET Trench MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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February 2007
FDMS2734
N-Channel UltraFET Trench® MOSFET
250V, 14A, 122mΩ
Features
General Description
tm
Max rDS(on) = 122mΩ at VGS = 10V, ID = 2.8A
Max rDS(on) = 130mΩ at VGS = 6V, ID = 1.7A
Low Miller Charge
Optimized efficiency at high frequencies
RoHS Compliant
UItraFET devices combine characteristics that enable
benchmark efficiency in power conversion applications.
Optimized for rDS(on), low ESR, low total and Miller gate charge,
these devices are ideal for high frequency DC to DC converters.
Application
DC - DC Conversion
Pin 1
S S SG
DD DD
Power 56 (Bottom view)
D5
D6
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D7
D8
4G
3S
2S
1S
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Silicon limited)
-Continuous
-Pulsed
TC = 25°C
TA = 25°C
PD
TJ, TSTG
Power Dissipation
TC = 25°C
Power Dissipation
TA = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
Ratings
250
±20
14
2.8
16
78
2.5
-55 to +150
Units
V
V
A
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
1.6
50
°C/W
Device Marking
FDMS2734
Device
FDMS2734
Package
Power 56
Reel Size
13’’
Tape Width
12mm
Quantity
3000 units
©2007 Fairchild Semiconductor Corporation
FDMS2734 Rev.C
1
www.fairchildsemi.com
1 page  
Typical Characteristics TJ = 25°C unless otherwise noted
2
1 DUTY CYCLE-DESCENDING ORDER
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
1E-3
1E-4
10-3
SINGLE PULSE
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION (s)
Figure 13. Transient Thermal Response Curve
102
103
FDMS2734 Rev.C
5 www.fairchildsemi.com
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet FDMS2734.PDF ] | |
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