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PDF FDMS2672 Data sheet ( Hoja de datos )
| Número de pieza | FDMS2672 | |
| Descripción | N-Channel UltraFET Trench MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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February 2007
FDMS2672
N-Channel UltraFET Trench MOSFET
200V, 20A, 77mΩ
Features
General Description
tm
Max rDS(on) = 77mΩ at VGS = 10V, ID = 3.7A
Max rDS(on) = 88mΩ at VGS = 6V, ID = 3.5A
Low Miller Charge
RoHS Compliant
UItraFET devices combine characteristics that enable
benchmark efficiency in power conversion applications.
Optimized for rDS(on), low ESR, low total and Miller gate charge,
these devices are ideal for high frequency DC to DC converters.
Application
DC - DC Conversion
Pin 1
S S SG
DD DD
Power 56 (Bottom view)
D5
D6
D 7www.DataSheet4U.com
D8
4G
3S
2S
1S
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Silicon limited)
-Continuous
-Pulsed
TC = 25°C
TA = 25°C
PD
TJ, TSTG
Power Dissipation
TC = 25°C
Power Dissipation
TA = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
Ratings
200
±20
20
3.7
20
78
2.5
-55 to +150
Units
V
V
A
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
1.6
50
°C/W
Device Marking
FDMS2672
Device
FDMS2672
Package
Power 56
Reel Size
13’’
Tape Width
12mm
Quantity
3000 units
©2007 Fairchild Semiconductor Corporation
FDMS2672 Rev.C
1
www.fairchildsemi.com
1 page  
Typical Characteristics TJ = 25°C unless otherwise noted
2
1 DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.1 0.05
0.02
0.01
PDM
0.01
1E-3
5E-4
10-3
SINGLE PULSE
10-2
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
10-1 100 101 102
t, RECTANGULAR PULSE DURATION (s)
Figure 13. Transient Thermal Response Curve
103
FDMS2672 Rev.C
5 www.fairchildsemi.com
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet FDMS2672.PDF ] | |
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