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PDF FDMC8878 Data sheet ( Hoja de datos )
| Número de pieza | FDMC8878 | |
| Descripción | N-Channel Power Trench MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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FDMC8878
N-Channel Power Trench® MOSFET
30V, 16.5A, 14mΩ
Features
General Description
February 2007
tm
Max rDS(on) = 14mΩ at VGS = 10V, ID = 9.6A
Max rDS(on) = 17mΩ at VGS = 4.5V, ID = 8.7A
Low Profile - 1mm max in Power 33
RoHS Compliant
This N-Channel MOSFET is a rugged gate version of
Fairchild Semiconductor‘s advanced Power Trench
process. It has been optimized for power management
applications.
Application
DC - DC Conversion
Bottom
5 6 78
Top
DD
D
D
www.DataSheet4U.com
4 321
Power 33
G
S SS
D5
D6
D7
D8
4G
3S
2S
1S
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
TC = 25°C
TC = 25°C
TA = 25°C
PD
TJ, TSTG
Power Dissipation
TC = 25°C
Power Dissipation
TA = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
Ratings
30
±20
16.5
38
9.6
60
31
2.1
-55 to +150
Units
V
V
A
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
4
60
°C/W
Device Marking
FDMC8878
Device
FDMC8878
Package
Power 33
Reel Size
7”
Tape Width
8mm
Quantity
3000 units
©2007 Fairchild Semiconductor Corporation
FDMC8878 Rev.D
1
www.fairchildsemi.com
1 page  
Typical Characteristics TJ = 25°C unless otherwise noted
2
1 DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.1 0.02
0.01
PDM
0.01
0.003
10-3
SINGLE PULSE
10-2
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
10-1 100 101
t, RECTANGULAR PULSE DURATION (s)
102
Figure 13. Transient Thermal Response Curve
103
FDMC8878 Rev.D
5 www.fairchildsemi.com
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet FDMC8878.PDF ] | |
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