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PDF FDMB668P Data sheet ( Hoja de datos )

Número de pieza FDMB668P
Descripción P-Channel 1.8V Logic Level PowerTrench MOSFET
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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No Preview Available ! FDMB668P Hoja de datos, Descripción, Manual

February 2007
FDMB668P
P-Channel 1.8V Logic Level PowerTrench® MOSFET
-20V, -6.1A, 35m
Features
General Description
tm
„ Max rDS(on) = 35mat VGS = -4.5V, ID = -6.1A
„ Max rDS(on) = 50mat VGS = -2.5V, ID = -5.1A
„ Max rDS(on) = 70mat VGS = -1.8V, ID = -4.3A
„ Excellent for portable application at VGS = -1.8V
„ Thin profile - Maximum height = 0.8mm
„ RoHS compliant
FDMB668P is excellent for load switch and DC-DC conversion
among portable electronics. It achieves an optimal balance
among efficiency, thermal transfer and small form by integrating
a P-channel MOSFET with minimized on-state resistance into a
MicroFET 3x1.9 package. When optimizing the dimension of
portable applications, this little device offers a very efficient
solution.
Applications
„ Load Switch in:
-HDD
-Portable Gaming, MP3
-Notebook
„ DC/DC Conversion
PIN 1
GATE
SOURCE
MicroFET 3X1.9
D1
D 2www.DataSheet4U.com
D3
G4
8D
7D
6D
5S
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Parameter
PD
Power Dissipation
Power Dissipation
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
Ratings
-20
±8
-6.1
-40
1.9
0.8
-55 to +150
Units
V
V
A
W
°C
RθJA
RθJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
(Note 1b)
65
165
°C/W
Device Marking
668
Device
FDMB668P
Package
MicroFET 3X1.9
Reel Size
7”
Tape Width
8mm
Quantity
3000 units
©2007 Fairchild Semiconductor Corporation
FDMB668P Rev.B
1
www.fairchildsemi.com

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