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PDF FDMA530PZ Data sheet ( Hoja de datos )
| Número de pieza | FDMA530PZ | |
| Descripción | Single P-Channel PowerTrench MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
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January 2007
FDMA530PZ
Single P-Channel PowerTrench® MOSFET
–30V, –6.8A, 35mΩ
tm
Features
General Description
Max rDS(on) = 35mΩ at VGS = –10V, ID = –6.8A
Max rDS(on) = 65mΩ at VGS = –4.5V, ID = –5.0A
Low profile - 0.8mm maximum - in the new package MicroFET
2X2 mm
RoHS Compliant
This device is designed specifically for battery charge or load
switching in cellular handset and other ultraportable
applications . It features a MOSFET with low on-state resistance.
The MicroFET 2X2 package offers exceptional thermal
performance for its physical size and is well suited to linear mode
applications.
Pin 1
Drain
DD G
Source
Bottom Drain Contact
D1
6D
D2
5D
www.DataSheet4U.com
G
3
4S
DD S
MicroFET 2X2 (Bottom View)
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
Ratings
–30
±25
–6.8
–24
2.4
0.9
–55 to +150
Units
V
V
A
W
°C
RθJA
RθJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
(Note 1b)
52
145
°C/W
Device Marking
530
Device
FDMA530PZ
Package
MicroFET 2X2
Reel Size
7’’
Tape Width
8mm
Quantity
3000 units
©2006 Fairchild Semiconductor Corporation
FDMA530PZ Rev.B
1
www.fairchildsemi.com
1 page  
NOTES:
A. NOT FULLY CONFORM TO JEDEC REGISTRATION
MO-229 DATED AUG/2003.
B. DIMENSIONS ARE IN MILLIMETERS.
C. DIMENSIONS AND TOLERANCES PER
ASME Y14.5M,1994
MLP06LrevA
FDMA530PZ Rev.B
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet FDMA530PZ.PDF ] | |
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