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PDF FDMA1025P Data sheet ( Hoja de datos )

Número de pieza FDMA1025P
Descripción Dual P-Channel PowerTrench MOSFET
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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No Preview Available ! FDMA1025P Hoja de datos, Descripción, Manual

FDMA1025P
Dual P-Channel PowerTrench® MOSFET
20V, 3.1A, 105m
Features
General Description
December 2006
tm
„ Max rDS(on) = 155mat VGS = 4.5V, ID = 3.1A
„ Max rDS(on) = 220mat VGS = 2.5V, ID = 2.3A
„ Low profile - 0.8mm maximum - in the new package MicroFET
2X2 mm‘
„ RoHS Compliant
This device is designed specifically as a single package solution
for the battery charge switch in cellular handset and other ultra -
portable applications. It features two independent P-Channel
MOSFETs with low on-state resistance for minimum conduction
losses. When connected in the typical common source
configuration, bi-directional current flow is possible.
The MicroFET 2X2 package offers exceptional thermal
performance for its physical size and well suited to linear mode
applications.
Application
„ DC - DC Conversion
PIN 1
S1 G1 D2
D1 D2
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S1 1
G1 2
6 D1
5 G2
D1 G2 S2
MicroFET 2X2
D2 3
4 S2
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Power Dissipation for Single Operation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
Ratings
20
±12
3.1
6
1.4
0.7
55 to +150
Units
V
V
A
W
°C
RθJA
RθJA
RθJA
RθJA
Thermal Resistance Single Operation, Junction to Ambient
Thermal Resistance Single Operation, Junction to Ambient
Thermal Resistance Dual Operation, Junction to Ambient
Thermal Resistance Dual Operation, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
(Note 1b)
86
173
69
151
°C/W
Device Marking
025
Device
FDMA1025P
Package
MLP2X2
Reel Size
7’’
Tape Width
8mm
Quantity
3000 units
©2006 Fairchild Semiconductor Corporation
FDMA1025P Rev.B
1
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