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PDF FDMA1023PZ Data sheet ( Hoja de datos )
| Número de pieza | FDMA1023PZ | |
| Descripción | Dual P-Channel PowerTrench MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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March 2007
FDMA1023PZ
Dual P-Channel PowerTrench® MOSFET
–20V, –3.7A, 72mΩ
Features
General Description
Max rDS(on) = 72mΩ at VGS = –4.5V, ID = –3.7A
Max rDS(on) = 95mΩ at VGS = –2.5V, ID = –3.2A
Max rDS(on) = 130mΩ at VGS = –1.8V, ID = –2.0A
Max rDS(on) = 195mΩ at VGS = –1.5V, ID = –1.0A
Low profile - 0.8 mm maximum - in the new package
MicroFET 2x2 mm
RoHS Compliant
This device is designed specifically as a single package solution
for the battery charge switch in cellular handset and other ultra-
portable applications. It features two independent P-Channel
MOSFETs with low on-state resistance for minimum conduction
losses. When connected in the typical common source
configuration, bi-directional current flow is possible.
The MicroFET 2X2 package offers exceptional thermal
performance for its physical size and is well suited to linear mode
applications.
Pin 1
S1 G1 D2
S1 1
6 D1
D1 D2
www.DataSheet4U.com
G1 2
D2 3
5 G2
4 S2
MicroFET 2X2
D1 G2 S2
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
PD
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Power Dissipation
Parameter
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
Ratings
–20
±8
–3.7
–6
1.5
0.7
–55 to +150
Units
V
V
A
W
°C
RθJA
RθJA
RθJA
RθJA
Thermal Resistance for Single Operation, Junction to Ambient
Thermal Resistance for Single Operation, Junction to Ambient
Thermal Resistance for Single Operation, Junction to Ambient
Thermal Resistance for Single Operation, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1d)
86
173
69
151
°C/W
Device Marking
023
Device
FDMA1023PZ
Package
MicroFET 2X2
Reel Size
7”
Tape Width
8mm
Quantity
3000 units
©2007 Fairchild Semiconductor Corporation
FDMA1023PZ Rev.B
1
www.fairchildsemi.com
1 page  
Typical Characteristics TJ = 25°C unless otherwise noted
5
ID = -3.7A
4
3
2
1
VDD = -5V
VDD = -10V
VDD = -15V
0
0 2 4 6 8 10
Qg, GATE CHARGE(nC)
Figure 7. Gate Charge Characteristics
1000
Ciss
Coss
100
f = 1MHz
VGS = 0V
Crss
40
0.1
1 10
-VDS, DRAIN TO SOURCE VOLTAGE (V)
20
Figure 8. Capacitance Characteristics
20
10 rDS(on) LIMIT
100us
1 1ms
VGS=-4.5V
0.1 SINGLE PULSE
RθJA=173oC/W
TA = 25oC
0.01
0.1
1
10ms
100ms
1s
10s
DC
10 60
-VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 9. Forward Bias Safe
Operating Area
100 VGS = -10V
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
10
I = I25
1----5---0-1---2-–--5--T----A---
SINGLE PULSE
RθJA = 173oC/W
1 TA=25oC
SINGLE PULSE
0.5
10-4 10-3 10-2 10-1 100 101
t, PULSE WIDTH (s)
TA = 25oC
102 103
Figure 10. Single Pulse Maximum
Power Dissipation
2
1
0.1
0.01
0.005
10-4
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
10-3
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION (s)
Figure 11. Transient Thermal Response Curve
102
103
FDMA1023PZ Rev.B
5 www.fairchildsemi.com
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet FDMA1023PZ.PDF ] | |
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