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PDF FDFS6N548 Data sheet ( Hoja de datos )

Número de pieza FDFS6N548
Descripción Integrated N-Channel PowerTrench MOSFET and Schottky Diode
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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No Preview Available ! FDFS6N548 Hoja de datos, Descripción, Manual

January 2007
FDFS6N548
Integrated N-Channel PowerTrench® MOSFET and Schottky Diode
tm
30V, 7A, 23m
Features
General Description
„ Max rDS(on) = 23mat VGS = 10V, ID = 7A
„ Max rDS(on) = 30mat VGS = 4.5V, ID = 6A
„ VF < 0.45V @ 2A
VF < 0.28V @ 100mA
„ Schottky and MOSFET incorporated into single power surface
mount SO-8 package
„ Electrically independent Schottky and MOSFET pinout for
design flexibility
The FDFS6N548 combines the exceptional performance of
Fairchild's PowerTrench MOSFET technology with a very low
forward voltage drop Schottky barrier rectifier in an SO-8
package.
This device is designed specifically as a single package solution
for DC to DC converters. It features a fast switching, low gate
charge MOSFET with very low on-state resistance. The
independently connected Schottky diode allows its use in a
variety of DC/DC converter topologies.
Application
„ Low Miller Charge
„ DC/DC Conversion
D
D
C
C
SO-8
Pin 1
G
S
A
A
www.DataSheet4U.com
A1
A2
S3
G4
8C
7C
6D
5D
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Parameter
PD
EAS
VRRM
IO
TJ, TSTG
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
Drain-Source Avalanche Energy
Schotty Repetitive Peak Reverse Voltage
Schotty Average Forward Current
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 3)
(Note 1a)
Ratings
30
±20
7
30
2
1.6
12
20
2
-55 to +150
Units
V
V
A
W
mJ
V
A
°C
RθJA
RθJC
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Package Marking and Ordering Information
(Note 1a)
(Note 1)
78
40
°C/W
Device Marking
FDFS6N548
Device
FDFS6N548
Package
SO-8
Reel Size
330mm
Tape Width
12mm
Quantity
2500 units
©2007 Fairchild Semiconductor Corporation
FDFS6N548 Rev.B
1
www.fairchildsemi.com

1 page




FDFS6N548 pdf
Typical Characteristics TJ = 25°C unless otherwise noted
10
ID = 7A
8
6
4
VDD = 15V
VDD = 10V
VDD = 20V
2
0
02468
Qg, GATE CHARGE(nC)
Figure 7. Gate Charge Characteristics
10
1000
Ciss
Coss
Crss
100
f = 1MHz
VGS = 0V
40
0.1
1 10
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure8. CapacitancevsDrain
to Source Voltage
30
8
7
6
5
4
3 TJ = 25oC
TJ = 125oC
2
1
0.01
0.1 1
tAV, TIME IN AVALANCHE(ms)
Figure9. Unclamped Inductive
Switching Capability
10 20
8
6
VGS = 10V
4
VGS = 4.5V
2
RθJA = 78oC/W
0
25 50 75 100 125
TA, AMBIENT TEMPERATURE (oC)
Figure 10. Maximum Continuous Drain
Current vs Ambient Temperature
150
50
10
100us
1 1ms
OPERATION IN THIS
AREA MAY BE
0.1 LIMITED BY rDS(on)
0.01
0.1
1
SINGLE PULSE
TJ = MAX RATED
TA = 25oC
10
10ms
100ms
1s
10s
DC
80
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
300
VGS = 10V
100
10
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
I = I25
1---5---0--1---2---5-T----A---
TA = 25oC
1
0.5
10-4
SINGLE PULSE
10-3 10-2 10-1 100 101
t, PULSE WIDTH (s)
102
Figure 12. Single Pulse Maximum
Power Dissipation
103
FDFS6N548 Rev.B
5 www.fairchildsemi.com

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