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Número de pieza | FDB14N30 | |
Descripción | N-Channel MOSFET | |
Fabricantes | Fairchild Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de FDB14N30 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! FDB14N30
300V N-Channel MOSFET
Features
• 14A, 300V, RDS(on) = 0.29Ω @VGS = 10 V
• Low gate charge ( typical 18 nC)
• Low Crss ( typical 17 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
February 2007
UniFETTM
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
DD
GS
D2-PAK
FDB Series
Absolute Maximum Ratings
www.DataSheet4U.com
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
(Note 1)
Gate-Source voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation
(TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
Parameter
RθJC
Thermal Resistance, Junction-to-Case
RθJA*
Thermal Resistance, Junction-to-Ambient*
RθJA
Thermal Resistance, Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
©2007 Fairchild Semiconductor Corporation
FDB14N30 Rev. A
1
G
S
FDB14N30
300
14
8.4
56
±30
330
14
14
4.5
140
1.12
-55 to +150
300
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Min.
--
--
--
Max.
0.89
40
62.5
Unit
°C/W
°C/W
°C/W
www.fairchildsemi.com
1 page Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDB14N30 Rev. A
5 www.fairchildsemi.com
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet FDB14N30.PDF ] |
Número de pieza | Descripción | Fabricantes |
FDB14N30 | N-Channel MOSFET | Fairchild Semiconductor |
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