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PDF FCA20N60F Data sheet ( Hoja de datos )
| Número de pieza | FCA20N60F | |
| Descripción | N-CHANNEL FRFET MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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FCA20N60F
May 2014
N-Channel SuperFET® FRFET® MOSFET
600 V, 20 A, 190 mΩ
Features
Description
• 650 V @ TJ = 150°C
• Typ. RDS(on) = 150 mΩ
• Fast Recovery Type (Typ. Trr = 160 ns )
• Ultra Low Gate Charge (Typ. Qg = 75 nC )
• Low Effective Output Capacitance (Typ. Coss(eff.) = 165 pF )
• 100% Avalanche Tested
• RoHS Compliant
Applications
• LCD / LED / PDP TV
• Solar Inverter
• AC-DC Power Supply
SuperFET® MOSFET is Fairchild Semiconductor’s first
generation of high voltage super-junction (SJ) MOSFET family
that is utilizing charge balance technology for outstanding low
on-resistance and lower gate charge performance. This
technology is tailored to minimize conduction loss, provide
superior switching performance, dv/dt rate and higher
avalanche energy. Consequently, SuperFET MOSFET is very
suitable for the switching power applications such as PFC,
server/telecom power, FPD TV power, ATX power and industrial
power applications. SuperFET FRFET® MOSFET’s optimized
body diode reverse recovery performance can remove
additional component and improve system reliability.
D
G
D
S
TO-3PN
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol
Parameter
VDSS
ID
IDM
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
(Note 1)
VGSS
EAS
IAR
EAR
dv/dt
PD
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25°C)
- Derate . bove 25°C
(Note 2)
(Note 1)
(Note 1)
(Note 3)
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
Parameter
RθJC
RθJA
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient, Max.
©2007 Fairchild Semiconductor Corporation
FCA20N60F Rev. C3
1
G
S
FCA20N60F
600
20
12.5
60
± 30
690
20
20.8
50
208
1.67
-55 to +150
300
FCA20N60F
0.6
40
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
°C/W
www.fairchildsemi.com
1 page  
Same Type
50KΩ as DUT
12V 200nF
300nF
VGS
10V
Qg
VGS
VDS
Qgs Qgd
IG = const.
DUT
Charge
Figure 12. Gate Charge Test Circuit & Waveform
VGS
VDS
VGS
RG
RL
VDD
DUT
VDS
90%
VGS 10%
td(on)
tr
t on
td(off)
tf
t off
Figure 13. Resistive Switching Test Circuit & Waveforms
VDS
ID
RG
L
EAS = --21-- L IAS2
BVDSS
--------------------
BVDSS - VDD
BVDSS
IAS
VDD ID (t)
VGS
DUT
VDD
VDS (t)
t p t p Time
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
©2007 Fairchild Semiconductor Corporation
FCA20N60F Rev. C3
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet FCA20N60F.PDF ] | |
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