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Número de pieza | AH276 | |
Descripción | COMPLEMENTARY OUTPUT HALL EFFECT LATCH | |
Fabricantes | BCD Semiconductor | |
Logotipo | ||
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No Preview Available ! COMPLEMENTARY OUTPUT HALL EFFECT LATCH
General Description
Features
Data Sheet
AH276
The AH276 is an integrated Hall sensor with output
driver designed for electronic commutation of brush-
less DC motor applications. The device includes an on-
chip Hall sensor for magnetic sensing, an amplifier
that amplifies the Hall voltage, a Schmitt trigger to
provide switching hysteresis for noise rejection, a tem-
perature compensation circuit to compensate the tem-
perature drift of Hall sensitivity and two
complementary open-collector drivers for sinking
large load current. It also includes an internal band-gap
regulator which is used to provide bias voltage for
internal circuits.
· On-Chip Hall Sensor
· 3.5V to 16V Supply Voltage
· 350mA (avg) Output Sink Current
· Reversed Supply Voltage Protection
· Build in Over Temperature Protection Function
· -20oC to 85oC Operating Temperature
· Low Profile TO-94 (SIP-4L) Package
· ESD Rating: 300V (Machine Model)
Applications
Placing the device in a variable magnetic field, if the · Dual-Coil Brushless DC Motor
magnetic flux density is larger than threshold BOP, the
pin DO will be turned low (on) and pin DOB will be
·
·
Dual-Coil Brushless DC Fan
Revolution Counting
turned high (off). This output state is held until the · Speed Measurement
magnetic flux density reverses and falls below BRP,
then causes DO to be turned high (off) and DOB
turned low (on).
AH276 is available in TO-94 (SIP-4L) package.
Nov. 2009 Rev. 1. 4
TO-94
Figure 1. Package Type of AH276
BCD Semiconductor Manufacturing Limited
1
1 page Data Sheet
COMPLEMENTARY OUTPUT HALL EFFECT LATCH
AH276
Electrical Characteristics
(TA=25oC, VCC=14V, unless otherwise specified)
Parameter
Output Saturation Voltage
Output Leakage Current
Supply Current
Output Rise Time
Output Fall Time
Switch Time Differential
Output Zener Breakdown Voltage
Thermal Protection Temperature
Thermal Protection Hysteresis
Symbol
VSAT
IOL
ICC
tr
tf
∆t
VZ
TSD
∆TSD
Test Condition
VCC=3.5V, IO=100mA
IO=350mA
VCE=16V
VCC=16V, Output Open
RL=820Ω, CL=20pF
RL=820Ω, CL=20pF
RL=820Ω, CL=20pF
Min Typ Max Unit
0.3 V
0.35 0.6
V
0.1 10 µA
12 16 mA
3.0 10
µs
0.3 1.5
µs
3.0 10
55
µs
V
178 oC
40 oC
Magnetic Characteristics
(TA=25oC)
Parameter
Symbol
Grade
Min
Typ
Max Unit
Operating Point
A
BOP B
10
5
50 Gauss
70 Gauss
C 100 Gauss
Releasing Point
A -50
BRP B -70
-10 Gauss
-5 Gauss
C -100
Gauss
Hysteresis
BHYS
75 Gauss
VDO (V)
Off-state
High
Turn off
BHYS
Turn on
Nov. 2009 Rev. 1. 4
VSAT
Low
On-state
N BRP 0 BOP
S
Magnetic Flux Density (Gauss)
BCD Semiconductor Manufacturing Limited
5
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet AH276.PDF ] |
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