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PDF K2845 Data sheet ( Hoja de datos )
| Número de pieza | K2845 | |
| Descripción | MOSFET ( Transistor ) - 2SK2845 | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de K2845 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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2SK2845
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π−MOSIII)
2SK2845
Chopper Regulator, DC/DC Converter and Motor Drive
Applications
z Low drain-source ON-resistance
: RDS (ON) = 8.0 Ω (typ.)
z High forward transfer admittance
: |Yfs| = 0.9 S (typ.)
z Low leakage current : IDSS = 100 μA (max) (VDS = 720 V)
z Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single-pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
900
900
±30
1
3
40
324
1
4.0
150
−55 to 150
V
V
V
A
W
mJ
A
mJ
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Thermal Characteristics
Characteristic
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch−c)
Rth (ch−a)
3.125
125
°C / W
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 594 mH, RG = 25 Ω, IAR = 1 A
Note 3: Repetitive rating: pulse width limited by maximum channel
temperature
This transistor is an electrostatic-sensitive device. Handle with care.
1
6.8 MAX.
5.2 ± 0.2
Unit: mm
0.6 MAX.
0.95 MAX.
0.6 ± 0.15
2.3 2.3
0.6 MAX.
123
1. GATE
2. DRAIN
（HEAT SINK）
3. SOURSE
2
1
3
JEDEC
―
JEITA
SC-64
TOSHIBA
2-7B5B
Weight: 0.36 g (typ.)
6.8 MAX.
5.2 ± 0.2
0.6 MAX.
0.6 ± 0.15
0.95 MAX.
0.6 ± 0.15
2.3 2.3
123
2.3 2.3
1. GATE
2. DRAIN
（HEAT SINK）
3. SOURSE
0.6 MAX.
2
1
3
JEDEC
―
JEITA
―
TOSHIBA
2-7B7B
Weight: 0.36 g (typ.)
2009-07-13
1 page  
2SK2845
RG = 25 Ω
VDD = 90 V, L = 594 mH
EAS
=
1
2
⋅ L ⋅ I2
⋅ ⎜⎛
⎝
BVDSS
BVDSS − VDD
⎟⎞
⎠
5 2009-07-13
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet K2845.PDF ] | |
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