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PDF NTHD4102P Data sheet ( Hoja de datos )
| Número de pieza | NTHD4102P | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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NTHD4102P
Power MOSFET
−20 V, −4.1 A, Dual P−Channel ChipFETt
Features
• Offers an Ultra Low RDS(ON) Solution in the ChipFET Package
• Miniature ChipFET Package 40% Smaller Footprint than TSOP−6
• Low Profile (<1.1 mm) Allows it to Fit Easily into Extremely Thin
Environments such as Portable Electronics
• Simplifies Circuit Design since Additional Boost Circuits for Gate
Voltages are not Required
• Operated at Standard Logic Level Gate Drive, Facilitating Future
Migration to Lower Levels using the same Basic Topology
• Pb−Free Package is Available
Applications
• Optimized for Battery and Load Management Applications in
Portable Equipment such as MP3 Players, Cell Phones, and PDAs
• Charge Control in Battery Chargers
• Buck and Boost Converters
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol wVwaw.lDuaetaSheet4UUn.coimt
Drain−to−Source Voltage
VDSS −20 V
Gate−to−Source Voltage
VGS "8.0 V
Continuous Drain
Current (Note 1)
TA = 25°C
Steady State
TA = 85°C
ID
−2.9 A
−2.1
t ≤ 10 s
TA = 25°C
−4.1
Power Dissipation Steady State
(Note 1)
t ≤ 10 s
TA = 25°C
PD
1.1 W
2.1
Pulsed Drain
Current
tp = 10 ms
IDM −13.8 A
Operating Junction and Storage Temperature
Source Current (Body Diode)
Lead Temperature for Soldering
Purposes (1/8” from case for 10 s)
TJ,
TSTG
IS
TL
−55 to
150
−1.1
260
°C
A
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol Max Unit
Junction−to−Ambient, Steady State (Note 1)
Junction−to−Ambient, t ≤ 10s (Note 1)
RqJA
113 °C/W
60
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces)
© Semiconductor Components Industries, LLC, 2005
November, 2005 − Rev. 5
1
http://onsemi.com
V(BR)DSS
−20 V
RDS(ON) TYP
ID MAX
64 mW @ −4.5 V
85 mW @ −2.5 V
−4.1 A
120 mW @ −1.8 V
S1 S2
G1 G2
D1
P−Channel MOSFET
D2
P−Channel MOSFET
ChipFET
CASE 1206A
STYLE 2
PIN
CONNECTIONS
MARKING
DIAGRAM
D1 8
D1 7
D2 6
D2 5
1 S1
2 G1
3 S2
4 G2
1
2
3
4
8
7
6
5
C7 = Specific Device Code
M = Month Code
G = Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping†
NTHD4102PT1 ChipFET 3000/Tape & Reel
NTHD4102PT1G ChipFET 3000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
NTHD4102P/D
1 page  
NTHD4102P
PACKAGE DIMENSIONS
ChipFET]
CASE 1206A−03
ISSUE G
HE
e1
D
8765
1234
E
b
e
A
q
L
c
0.05 (0.002)
5678
4321
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. MOLD GATE BURRS SHALL NOT EXCEED 0.13 MM PER SIDE.
4. LEADFRAME TO MOLDED BODY OFFSET IN HORIZONTAL
AND VERTICAL SHALL NOT EXCEED 0.08 MM.
5. DIMENSIONS A AND B EXCLUSIVE OF MOLD GATE BURRS.
6. NO MOLD FLASH ALLOWED ON THE TOP AND BOTTOM LEAD
SURFACE.
STYLE 2:
PIN 1. SOURCE 1
2. GATE 1
3. SOURCE 2
4. GATE 2
5. DRAIN 2
6. DRAIN 2
7. DRAIN 1
8. DRAIN 1
MILLIMETERS
DIM MIN NOM MAX
A 1.00
1.05
1.10
b 0.25 0.30 0.35
c 0.10 0.15 0.20
D 2.95
3.05
3.10
E 1.55
1.65
1.70
e 0.65 BSC
e1 0.55 BSC
L 0.28 0.35 0.42
H E 1.80
1.90
2.00
q 5° NOM
MIN
0.039
0.010
0.004
0.116
0.061
0.011
0.071
INCHES
NOM
0.041
0.012
0.006
0.120
0.065
0.025 BSC
0.022 BSC
0.014
0.075
5° NOM
MAX
0.043
0.014
0.008
0.122
0.067
0.017
0.079
0.457
0.018
2.032
0.08
SOLDERING FOOTPRINT*
0.635
0.025
0.635
0.025
2.032
0.08
1.092
0.043
0.178
0.007
0.66
0.026
0.711
0.028
Basic
ǒ ǓSCALE 20:1
mm
inches
0.457
0.018
0.66
0.026
0.254
0.010
SCALE 20:1
ǒ mm Ǔ
inches
Style 2
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet NTHD4102P.PDF ] | |
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