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Número de pieza | NTF6P02T3 | |
Descripción | Power MOSFET ( Transistor ) | |
Fabricantes | ON Semiconductor | |
Logotipo | ||
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No Preview Available ! NTF6P02T3
Power MOSFET
−6.0 Amps, −20 Volts
P−Channel SOT−223
Features
• Low RDS(on)
• Logic Level Gate Drive
• Diode Exhibits High Speed, Soft Recovery
• Avalanche Energy Specified
• Pb−Free Package is Available
Typical Applications
• Power Management in Portables and Battery−Powered Products,
i.e.: Cellular and Cordless Telephones and PCMCIA Cards
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage
VDSS
−20 Vdc
Gate−to−Source Voltage
VGS ±8.0 Vdc
Drain Current (Note 1)
− Continuous @ TA = 25°C
− Continuous @ TA = 70°C
− Single Pulse (tp = 10 ms)
ID ww−w1.D0ataSheetA4Ud.ccom
ID −8.4
IDM −35 Apk
Total Power Dissipation @ TA = 25°C
PD 8.3 W
Operating and Storage Temperature Range
TJ, Tstg
− 55
to
+150
°C
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = −20 Vdc, VGS = −5.0 Vdc,
IL(pk) = −10 A, L = 3.0 mH, RG = 25W)
Thermal Resistance
− Junction to Lead (Note 1)
− Junction to Ambient (Note 2)
− Junction to Ambient (Note 3)
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
EAS 150 mJ
RRqqJJAL
RqJA
TL
°C/W
15
71.4
160
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Steady State.
2. When surface mounted to an FR4 board using 1” pad size,
(Cu. Area 1.127 sq in), Steady State.
3. When surface mounted to an FR4 board using minimum recommended pad
size, (Cu. Area 0.412 sq in), Steady State.
http://onsemi.com
−6.0 AMPERES
−20 VOLTS
RDS(on) = 44 mW (Typ.)
P−Channel
D
G
4
12
3
SOT−223
CASE 318E
STYLE 3
S
MARKING
DIAGRAM
& PIN
ASSIGNMENT
Drain
4
AWW
6P02 G
G
123
Gate Drain Source
A = Assembly Location
WW = Work Week
6P02 = Specific Device Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
NTF6P02T3
NTF6P02T3G
SOT−223
SOT−223
(Pb−Free)
4000/Tape & Reel
4000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2006
March, 2006 − Rev. 1
1
Publication Order Number:
NTF6P02T3/D
1 page NTF6P02T3
TYPICAL ELECTRICAL CHARACTERISTICS
1
D = 0.5
0.2
0.1
0.1 0.05
0.02
0.01
SINGLE PULSE
0.01
1.0E−03
1.0E−02
NORMALIZED TO RqJA AT STEADY STATE (1″ PAD)
0.0175 W 0.0710 W 0.2706 W 0.5779 W 0.7086 W
CHIP
JUNCTION 0.0154 F 0.0854 F 0.3074 F 1.7891 F 107.55 F
AMBIENT
1.0E−01
1.0E+00
t, TIME (s)
1.0E+01
Figure 11. FET Thermal Response
1.0E+02
1.0E+03
http://onsemi.com
5
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet NTF6P02T3.PDF ] |
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NTF6P02T3 | Power MOSFET ( Transistor ) | ON Semiconductor |
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