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PDF NTF6P02T3 Data sheet ( Hoja de datos )

Número de pieza NTF6P02T3
Descripción Power MOSFET ( Transistor )
Fabricantes ON Semiconductor 
Logotipo ON Semiconductor Logotipo



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No Preview Available ! NTF6P02T3 Hoja de datos, Descripción, Manual

NTF6P02T3
Power MOSFET
−6.0 Amps, −20 Volts
PChannel SOT223
Features
Low RDS(on)
Logic Level Gate Drive
Diode Exhibits High Speed, Soft Recovery
Avalanche Energy Specified
PbFree Package is Available
Typical Applications
Power Management in Portables and BatteryPowered Products,
i.e.: Cellular and Cordless Telephones and PCMCIA Cards
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value Unit
DraintoSource Voltage
VDSS
20 Vdc
GatetoSource Voltage
VGS ±8.0 Vdc
Drain Current (Note 1)
Continuous @ TA = 25°C
Continuous @ TA = 70°C
Single Pulse (tp = 10 ms)
ID www1.D0ataSheetA4Ud.ccom
ID 8.4
IDM 35 Apk
Total Power Dissipation @ TA = 25°C
PD 8.3 W
Operating and Storage Temperature Range
TJ, Tstg
55
to
+150
°C
Single Pulse DraintoSource Avalanche
Energy Starting TJ = 25°C
(VDD = 20 Vdc, VGS = 5.0 Vdc,
IL(pk) = 10 A, L = 3.0 mH, RG = 25W)
Thermal Resistance
Junction to Lead (Note 1)
Junction to Ambient (Note 2)
Junction to Ambient (Note 3)
Maximum Lead Temperature for Soldering
Purposes, 1/8from case for 10 seconds
EAS 150 mJ
RRqqJJAL
RqJA
TL
°C/W
15
71.4
160
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Steady State.
2. When surface mounted to an FR4 board using 1” pad size,
(Cu. Area 1.127 sq in), Steady State.
3. When surface mounted to an FR4 board using minimum recommended pad
size, (Cu. Area 0.412 sq in), Steady State.
http://onsemi.com
6.0 AMPERES
20 VOLTS
RDS(on) = 44 mW (Typ.)
PChannel
D
G
4
12
3
SOT223
CASE 318E
STYLE 3
S
MARKING
DIAGRAM
& PIN
ASSIGNMENT
Drain
4
AWW
6P02 G
G
123
Gate Drain Source
A = Assembly Location
WW = Work Week
6P02 = Specific Device Code
G = PbFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping
NTF6P02T3
NTF6P02T3G
SOT223
SOT223
(PbFree)
4000/Tape & Reel
4000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2006
March, 2006 Rev. 1
1
Publication Order Number:
NTF6P02T3/D

1 page




NTF6P02T3 pdf
NTF6P02T3
TYPICAL ELECTRICAL CHARACTERISTICS
1
D = 0.5
0.2
0.1
0.1 0.05
0.02
0.01
SINGLE PULSE
0.01
1.0E−03
1.0E−02
NORMALIZED TO RqJA AT STEADY STATE (1PAD)
0.0175 W 0.0710 W 0.2706 W 0.5779 W 0.7086 W
CHIP
JUNCTION 0.0154 F 0.0854 F 0.3074 F 1.7891 F 107.55 F
AMBIENT
1.0E−01
1.0E+00
t, TIME (s)
1.0E+01
Figure 11. FET Thermal Response
1.0E+02
1.0E+03
http://onsemi.com
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