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PDF 2N5089 Data sheet ( Hoja de datos )

Número de pieza 2N5089
Descripción (2N5088 / 2N5089) NPN GENERAL PURPOSE AMPLIFIER
Fabricantes Unisonic Technologies 
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UTC 2N5088/2N5089 NPN EPITAXIAL SILICON TRANSISTOR
NPN GENERAL PURPOSE AMPLIFIER
DESCRIPTION
The device is designed for low noise, high gain, general
purpose amplifier applications at collector currents from
1µA to 50mA.
1
TO-92
1:EMITTER 2:BASE 3:COLLECTOR
MAXIMUM RATINGS (TA=25°C, unless otherwise noted)
RATING
SYMBOL
2N5088 2N5089
UNIT
Collector-Emitter voltage
VCEO
30 25
V
Collector-Base voltage
VCBO
35 30
V
Emitter-base voltage
Collector current-continuous
VEBO
wwwIc.DataSheet4U.com
4.5
100
V
mA
Operating and Storage
Junction Temperature Range
Tj, Tstg
-55 ~ +150
°C
Note 1: These ratings are based on a maximum junction temperature of 150 degrees C.
Note 2: These are steady state limits. The factory should be consulted on applications involving pulsed or low duty
cycle operations.
THERMAL CHARACTERISTICS (TA=25°C, unless otherwise noted)
PARAMETER
SYMBOL
Total Device Dissipation
Derate above 25°C
PD
Thermal Resistance, Junction to Case
RθJC
Thermal Resistance, Junction to
Ambient
RθJA
MAX
625
5
83.3
200
UNIT
mW
mW/°C
°C/W
°C/W
UTC
UNISONIC TECHNOLOGIES CO., LTD. 1
QW-R201-040,A

1 page




2N5089 pdf
UTC 2N5088/2N5089 NPN EPITAXIAL SILICON TRANSISTOR
UTC
UNISONIC TECHNOLOGIES CO., LTD. 5
QW-R201-040,A

5 Page










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