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PDF RMPA2266 Data sheet ( Hoja de datos )
| Número de pieza | RMPA2266 | |
| Descripción | WCDMA Band I Power Amplifier Module | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de RMPA2266 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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PRELIMINARY
RMPA2266 i-Lo™
WCDMA Band I Power Amplifier Module
April 2007
tm
Features
General Description
■ 40% WCDMA efficiency at +28dBm Pout
The RMPA2266 Power Amplifier Module (PAM) is
■ 20% WCDMA efficiency (58mA total current) at
+16dBm Pout
■ Low quiescent current (Iccq): 25mA in low-power
mode
■ Meets UMTS/WCDMA performance requirements
■ Meets HSDPA performance requirements
Fairchild’s latest innovation in 50Ω matched, surface
mount modules targeting UMTS/WCDMA/HSDPA
applications. Answering the call for ultra-low DC power
consumption and extended battery life in portable
electronics, the RMPA2266 uses novel proprietary
circuitry to dramatically reduce amplifier current at low to
medium RF output power levels (< +16dBm), where the
■ Single positive-supply operation with low power and
handset most often operates. A simple two-state Vmode
shutdown modes
control is all that is needed to reduce operating current
– 3.4V typical Vcc operation
by more than 60% at 16dBm output power, and
– Low Vref (2.85V) compatible with advanced handset
chipsets
■ Compact Lead-free compliant LCC package –
(4.0 x 4.0 x 1.0mm nominal)
■ Industry standard pinout
■ Internally matched to 50Ω and DC blocked RF
quiescent current (Iccq) by as much as 70% compared
to traditional power-saving methods. No additional
circuitry, such as DC-to-DC converters, are required to
achieve this remarkable improvement in amplifier
efficiency. Further, the 4 x 4 x 1.0mm LCC package is
pin-compatible and a drop-in replacement for last
generation 4 x 4mm PAMs widely used today, minimizing
input/output
the design time to apply this performance-enhancing
technology. The multi-stage GaAs Microwave Monolithic
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Integrated Circuit (MMIC) is manufactured using
Fairchild RF’s InGaP Heterojunction Bipolar Transistor
(HBT) process.
Functional Block Diagram
(Top View)
Vcc1 1
RF IN 2
GND 3
Vmode 4
Vref 5
MMIC
INPUT
MATCH
BIAS/MODE SWITCH
10 Vcc2
OUTPUT
MATCH
9 GND
8 RF OUT
7 GND
6 GND
11 (paddle ground on package bottom)
©2007 Fairchild Semiconductor Corporation
RMPA2266 i-Lo™ Rev. D
www.fairchildsemi.com
1 page  
Package Outline
I/O 1 INDICATOR
1
(4.00mm
+.100
–.050
)
SQUARE
2
3
4
5
PRELIMINARY
TOP VIEW
10
9
8
7
6
1.1mm MAX.
.25mm TYP.
FRONT VIEW
3.50mm TYP.
.30mm TYP.
.85mm TYP.
2
11
1
1.08mm
1.84mm
BOTTOM VIEW
See Detail A
3.65mm
.18mm
.40mm
.10mm
.10mm
.40mm
.45mm
DETAIL A. TYP.
Signal Descriptions
Pin #
1
2
3
4
5
6
7
8
9
10
11
Signal Name
Vcc1
RF In
GND
Vmode
Vref
GND
GND
RF Out
GND
Vcc2
GND
Description
Supply Voltage to Input Stage
RF Input Signal
Ground
High Power/Low Power Mode Control
Reference Voltage
Ground
Ground
RF Output Signal
Ground
Supply Voltage to Output Stage
Paddle Ground
©2007 Fairchild Semiconductor Corporation
RMPA2266 i-Lo™ Rev. D
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet RMPA2266.PDF ] | |
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