|
|
PDF NAND01G-M Data sheet ( Hoja de datos )
| Número de pieza | NAND01G-M | |
| Descripción | (NANDxxx-M) NAND Flash Memories | |
| Fabricantes | ST Microelectronics | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de NAND01G-M (archivo pdf) en la parte inferior de esta página. Total 23 Páginas | ||
|
No Preview Available !
NAND256-M
NAND512-M, NAND01G-M
256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND
Flash Memories + 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP
Features
■ Multi-Chip Packages
– 1 die of 256 Mb, 512 Mb (x8/ x16) NAND
Flash + 1 die of 256 Mb (x16) SDR
LPSDRAM
– 1 die of 256 Mb, 512 Mb (x8/ x16) NAND
Flash + 2 dice of 256 Mb (x16) SDR
LPSDRAMs
– 1 die of 256 Mb, 512 Mb (x8/ x16) NAND
Flash +1 die of 256 Mb (x16) DDR
LPSDRAM
– 1 die of 512 Mb (x16) NAND Flash + 1 die
of 256 Mb or 512 Mb (x16) DDR LPSDRAM
FBGA
TFBGA107 10.5 x 13 x 1.2mm
TFBGA149 10 x 13.5 x 1.2mm
LFBGA137 10.5 x 13 x 1.4mm
TFBGA137 10.5 x 13 x 1.2 mm(1)
■ Supply voltages
– VDDF = 1.7V to 1.95V or 2.5V to 3.6V
– VDDD = VDDQD = 1.7V to 1.9V
■ Electronic Signature
■ ECOPACK® packages
■ Temperature range
– -30 to 85°C
Flash Memory
■ NAND Interface
– x8 or x16 bus width
– Multiplexed Address/ Data
(1) Preliminary specifications.
■ Fast Block Erase
– Block erase time: 2ms (typ)
www.DataSheet4U.com
■ Status Register
■ Data integrity
– 100,000 Program/Erase cycles
– 10 years Data Retention
LPSDRAM
■ Interface: x16 or x 32 bus width
■ Deep Power Down mode
■ Page size
– x8 device: (512 + 16 spare) Bytes
– x16 device: (256 + 8 spare) Words
■ 1.8v LVCMOS interface
■ Quad internal Banks controlled by BA0 and
BA1
■ Block size
– x8 device: (16K + 512 spare) Bytes
– x16 device: (8K + 256 spare) Words
■ Page Read/Program
– Random access: 15µs (max)
– Sequential access: 50ns (min)
– Page program time: 200µs (typ)
■ Automatic and controlled Precharge
■ Auto Refresh and Self Refresh
– 8,192 Refresh cycles/64ms
– Programmable Partial Array Self Refresh
– Auto Temperature Compensated Self
Refresh
■ Wrap sequence: sequential/interleave
■ Copy Back Program mode
– Fast page copy without external buffering
■ Burst Termination by Burst Stop command and
Precharge command
August 2006
Rev 5
1/23
www.st.com
2
1 page  
NAND256-M, NAND512-M, NAND01G-M
List of figures
List of figures
Figure 1.
Figure 2.
Figure 3.
Figure 4.
Figure 5.
Figure 6.
Figure 7.
Figure 8.
Figure 9.
Figure 10.
Logic Diagram: NAND Flash & 1 x SDR LPSDRAM. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Logic Diagram: NAND Flash & 2 x SDR LPSDRAMs. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Logic Diagram: NAND Flash & DDR LPSDRAM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
TFBGA107 Connections (Top view through package) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
TFBGA149 Connections (Top view through package) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
LFBGA137 and TFBGA137 Connections (Top view through package) . . . . . . . . . . . . . . . 15
TFBGA107 10.5x13mm - 10x14 active ball array, 0.80mm pitch, Bottom Outline . . . . . . . 17
TFBGA149 10x13.5mm - 12x16 active ball array, 0.80mm pitch, Bottom Outline . . . . . . . 18
LFBGA137 10.5x13mm - 10x13 active ball array, 0.8mm pitch- Bottom Outline . . . . . . . . 19
TFBGA137 10.5x13mm - 10x13 active ball array, 0.8mm pitch- Bottom Outline . . . . . . . . 20
5/23
5 Page 
NAND256-M, NAND512-M, NAND01G-M
Summary description
Figure 3. Logic Diagram: NAND Flash & DDR LPSDRAM
VDDQD VDDD VDDF
13
A0-A12
2
BA0-BA1
EF
R
WF
AL
CL
WP
K
K
KE
ED
WD
RAS
CAS
DQM0
DQM1
16
I/O0-I/O15
DQ0-DQ15
NAND256-M
NAND512-M
NAND01G-M
UDQS-LDQS
RB
VSSQD VSSD VSSF
Ai11023b
11/23
11 Page | ||
| Páginas | Total 23 Páginas | |
| PDF Descargar | [ Datasheet NAND01G-M.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| NAND01G-A | 128 Mbit / 256 Mbit / 512 Mbit / 1 Gbit (x8/x16) 528 Byte/264 Word Page / 1.8V/3V / NAND Flash Memories |  STMicroelectronics |
| NAND01G-B | (NAND0xG-B) NAND Flash Memory | ST Microelectronics |
| NAND01G-B2B | (NAND0xG-B2x) NAND Flash Memory | ST Microelectronics |
| NAND01G-B2B | NAND flash memory |  Numonyx |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |