|
|
PDF IRHE93130 Data sheet ( Hoja de datos )
| Número de pieza | IRHE93130 | |
| Descripción | (IRHE9130 / IRHE93130) RADIATION HARDENED POWER MOSFET SURFACE MOUNT | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de IRHE93130 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
|
No Preview Available !
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (LCC-18)
PD - 90881C
IRHE9130
100V, P-CHANNEL
REF: MIL-PRF-19500/630
RAD-Hard™ HEXFET®
MOSFETTECHNOLOGY
Product Summary
Part Number Radiation Level
IRHE9130 100K Rads (Si)
IRHE93130 300K Rads (Si)
RDS(on)
0.30Ω
0.30Ω
ID QPL Part Number
-6.5A JANSR2N7389U
-6.5A JANSF2N7389U
International Rectifier’s RAD-HardTM HEXFET® MOSFET
technology provides high performance power MOSFETs
for space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been characterized
for both Total Dose and Single Event Effects (SEE). The
combination of low Rdson and low gate charge reduces
the power losses in switching applications such as DC to
DC converters and motor control. These devicwewws.DraetaStaheient4U.com
all of the well established advantages of MOSFETs such
as voltage control, fast switching, ease of paralleling and
temperature stability of electrical parameters.
Absolute Maximum Ratings
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
TJ
TSTG
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
LCC - 18
Features:
n Single Event Effect (SEE) Hardened
n Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Package
n Surface Mount
n Light Weight
Pre-Irradiation
Units
-6.5
-4.1 A
-26
25 W
0.2 W/°C
±20 V
165 mJ
-6.5 A
2.5 mJ
-22 V/ns
-55 to 150
oC
300 ( for 5s)
0.42 (Typical)
g
For footnotes refer to the last page
www.irf.com
1
2/20/03
1 page  
Pre-Irradiation
IRHE9130
2000
1500
VGS = 0V, f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
1000
500
0
1
Coss
Crss
10 100
-VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20 ID = -6.5
16
12
VDS =-80V
VDS =-50V
VDS =-20V
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0 10 20 30 40 50 60
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
10
TJ = 150° C
1
TJ = 25°C
0.1
0.2
VGS = 0 V
1.0 1.8 2.6 3.4
-VSD ,Source-to-Drain Voltage (V)
4.2
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
10 100us
1ms
1 10ms
TC = 25°C
TJ = 150 °C
Single Pulse
0.1
1 10
100
-VDS , Drain-to-Source Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRHE93130.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| IRHE93130 | (IRHE9130 / IRHE93130) RADIATION HARDENED POWER MOSFET SURFACE MOUNT | International Rectifier |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |