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PDF 50N06 Data sheet ( Hoja de datos )

Número de pieza 50N06
Descripción N-CHANNEL POWER MOSFET
Fabricantes Unisonic Technologies 
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No Preview Available ! 50N06 Hoja de datos, Descripción, Manual

UNISONIC TECHNOLOGIES CO., LTD
50N06
MOSFET
50 Amps, 60 Volts
N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 50N06 is three-terminal silicon device with current
conduction capability of about 50A, fast switching speed. Low
on-state resistance, breakdown voltage rating of 60V, and max
threshold voltages of 4 volt.
It is mainly suitable electronic ballast, and low power switching
mode power appliances.
1
TO-220
1
TO-220F
FEATURES
* RDS(ON) = 23m@VGS = 10 V
* Ultra low gate charge ( typical 30 nC )
* Low reverse transfer Capacitance ( CRSS = typical 80 pF )
* Fast switching capability
* 100% avalanche energy specified
* Improved dv/dt capability
SYMBOL
2.Drain
www.DataSheet4U.com
*Pb-free plating product number: 50N06L
1.Gate
3.Source
ORDERING INFORMATION
Order Number
Normal
Lead Free Plating
50N06-TA3-T
50N06L-x-TA3-T
50N06-TF3-T
50N06L-x-TF3-T
Package
TO-220
TO-220F
Pin Assignment
123
GDS
GDS
Packing
Tube
Tube
50N06L-TA3-T
(1)Packing Type
(2)Package Type
(3)Lead Plating
(1) T: Tube
(2) TA3: TO-220, TF3: TO-220F
(3) L: Lead Free Plating, Blank: Pb/Sn
www.unisonic.com.tw
Copyright © 2005 Unisonic Technologies Co., Ltd
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50N06 pdf
50N06
TEST CIRCUITS AND WAVEFORMS (Cont.)
VDS
VGS
RG
10V
Pulse Width 1 s
Duty Factor 0.1%
RL
VDD
D.U.T.
VDS 90%
10%
VGS
tD(ON )
tR
MOSFET
tD (OFF)
tF
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
Same Type
50k as D.U.T.
12V
0.2 F
0.3 F
10V
QG
VGS
VDS
QGS
QGD
1mA
DUT
VG
Charge
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
VDS
L
BVDSS
10V
RG
tp
D.U.T.
VDD
IAS
tp Time
Fig. 4A Unclamped Inductive Switching Test Circuit Fig. 4B Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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