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PDF 2SB1386 Data sheet ( Hoja de datos )
| Número de pieza | 2SB1386 | |
| Descripción | Epitaxial Planar Transistor PNP Silicon | |
| Fabricantes | Weitron Technology | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2SB1386 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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Epitaxial Planar Transistor
PNP Silicon
MAXIMUM RATINGS (Ta=25 C)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
Symbol
VCEO
VCBO
VEBO
IC
THERMAL CHARACTERISTICS
Characteristics
Total Device Dissipation FR-5 Board(1)
TA =25 C
Derate above 25 C
Thermal Resistance, Junction Ambient
Junction and Storage, Temperature
Device Marking
2SB1386=
Symbol
PD
R θJAwww.DataSheet4U.com
TJ,Tstg
ELECTRICAL CHARACTERISTICS
Characteristics
Collector-Emitter Breakdown Voltage(IC =-1 mAdc, IB=0)
Collector-Base Breakdown Voltage(IC =-50 uAdc, IE=0)
Emitter-Base Breakdown Voltage(IE =-50 uAdc, IC =0)
Collector Cufoff Current(VCB=-20Vdc, IE=0)
Emitter Cufoff Current(VEB =-5Vdc, IC=0)
1. FR-5=1.0 I I0.75I I0.062 in
2SB1386
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SOT-23
Value
-20
-30
-6.0
Value
150
0.5
833
-55 to +150
Unit
Vdc
Vdc
Vdc
mAdc
Unit
mW
mW/ C
C/W
C
Symbol
Min Max
Unit
V(BR)CEO
-20
-
Vdc
V(BR)CBO
-30
-
Vdc
V(BR)EBO
-6.0
-
Vdc
ICBO
IEBO
- -0.5 uAdc
- -0.5 uAdc
WEITRON
http://www.weitron.com.tw
1 page  
2SB1386
1000
500
200
100
50
Ta =100 C
f=1MHz
Ic =0A
20
10
-0.1 -0.2 -0.5 -1 -2
-5 -10
EMITTER TO BASE VOLTAGE : VEB(V)
FIG.13 Emitter Input Capacitance
vs. Emitter-Base Voltage
WEITRON
http://www.weitron.com.tw
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet 2SB1386.PDF ] | |
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