|
|
PDF 2SB1116A Data sheet ( Hoja de datos )
| Número de pieza | 2SB1116A | |
| Descripción | PNP EPITAXIAL SILICON TRANSISTOR | |
| Fabricantes | Unisonic Technologies | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de 2SB1116A (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
|
No Preview Available !
UTC2SB1116/A PNP EPITAXIAL SILICON TRANSISTOR
PNP EPITAXIAL SILICON
TRANSISTOR
DESCRIPTION
* Complement to 2SD1616/A
APPLICATIONS
* Audio Frequency Power Amplifier
* Medium Speed Switching
1
TO-92
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
PARAMETER
SYMBOL
Collector-Base Voltage
2SB1116
2SB1116A
VCBO
Collector-Emitter Voltage
2SB1116
2SB1116A
VwCwEwO.DataSheet4U.com
Emitter-Base Voltage
VEBO
Collector Current (DC)
Ic
Collector Current (Pulse)*
Icp
Collector Power Dissipation
Pc
Junction Temperature
Tj
Storage Temperature
Tstg
*PW≦10ms,Duty Cycle≦50%
1: Emitter 2: Collector 3: Base
RATINGS
-60
-80
-50
-60
-6
-1
-2
0.75
150
-55 ~ +150
UNIT
V
V
V
A
A
W
°C
°C
ELECTRICAL CHARACTERISTICS (Ta=25°C)
PARAMETER
SYMBOL TEST CONDITIONS
Collector Cut-off Current
ICBO VCB=-60V,IE=0
Emitter Cut-off current
IEBO VEB=-6V,Ic=0
DC Current Gain*
2SB1116
2SB1116A
hFE1
VCE=-2V,Ic=-100mA
hFE2 VCE=-2V,Ic=-1A
Base-Emitter On Voltage*
VBE(on) VCE=-2V,Ic=-50mA
Collector-Emitter Saturation Voltage* VCE(sat) Ic=-1A,IB=-50mA
Base-Emitter Saturation Voltage*
VBE(sat) Ic=-1A,IB=-50mA
Output Capacitance
Cob VCB=-10V,IE=0,f=1MHz
Current Gain Bandwidth Product
fT VCE=-2V,Ic=-100mA
Turn On Time
Storage Time
Fall Time
tON Vcc=-10V,Ic=-100mA
tSTG IB1=-IB2=-10mA
tF VBE(off)=2 ~ 3V
*Pulse Test: PW≦350µs, Duty Cycle≦2%
MIN
135
135
81
-600
70
TYP
-650
-0.2
-0.9
25
120
0.07
0.7
0.07
MAX
-100
-100
UNIT
nA
nA
600
400
-700
-0.3
-1.2
mV
V
V
pF
MHz
μs
μs
μs
UTC UNISONIC TECHNOLOGIES CO., LTD. 1
QW-R201-066,A
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 2SB1116A.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| 2SB1116 | PNP SILICON TRANSISTORS |  NEC |
| 2SB1116 | PNP EPITAXIAL SILICON TRANSISTOR | Unisonic Technologies |
| 2SB1116 | PNP General Purpose Transistor |  Weitron |
| 2SB1116 | PNP Transistor |  JCST |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |