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PDF 2SA1627 Data sheet ( Hoja de datos )
| Número de pieza | 2SA1627 | |
| Descripción | PNP EPITAXIAL SILICON TRANSISTOR | |
| Fabricantes | Unisonic Technologies | |
| Logotipo |  |
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UTC2SA1627 PNPEPITAXIAL SILICON TRANSISTOR
PNP EPITAXIAL SILICON
TRANSISTOR
DESCRIPTION
The UTC 2SA1627 is designed for general purpose
amplifier and high speed switching applications.
FEATURES
*High voltage
*Low collector saturation voltage.
*High-speed switching
1
TO-126
1:EMITTER 2:COLLECTOR 3:BASE
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C )
PARAMETER
Collector-Base Voltage
SYMBOL
www.DataSheet4U.com
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Collector Power Dissipation
PC
Collector Current(DC)
Ic
Collector Current(PULSE)
Icp *1
Junction Temperature
Tj
Storage Temperature
*1 : PW≦10ms,Duty Cycle≦50%
TSTG
VALUE
-600
-600
-7.0
1.0
-1.0
-2.0
150
-55 to +150
UNIT
V
V
V
W
A
A
°C
°C
ELECTRICAL CHARACTERISTICS(Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Collector Cut-Off Current
ICBO
VCB= -600V,IE=0
Emitter Cut-Off Current
DC Current Gain
DC Current Gain
IEBO
hFE1*2
hFE2*2
VEB= -7.0V,Ic=0
VCE= -5.0V,Ic= -0.1A
VCE= -5.0V,Ic= -0.5A
30
5
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
VCE(sat)*2 Ic= -0.3A,IB= -0.06A
VBE(sat)*2 Ic= -0.3A,IB= -0.06A
Gain Bandwidth Product
fT VCE= -10V, IE=0.1A
10
TYP
58
19
-0.28
-0.85
28
MAX
-10
-10
120
-0.5
-1.2
UNIT
µA
µA
V
V
MHz
UTC
UNISONIC TECHNOLOGIES CO. LTD 1
QW-R204-010,B
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SA1627.PDF ] | |
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