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PDF FDP5800 Data sheet ( Hoja de datos )
| Número de pieza | FDP5800 | |
| Descripción | N-Channel Logic Level PowerTrench MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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www.DataSheet4U.com
November 2006
FDP5800
N-Channel Logic Level PowerTrench® MOSFET
60V,80A, 6mΩ
Features
Applications
• RDS(on) = 4.6mΩ (Typ.), VGS = 10V, ID = 80A
• Motor/ Body Load Control
• High performance trench technology for extermly low Rdson
• Power Train Management
• Low gate Charge
• Injection Systems
• High power and current handing capability
• DC-AC Converters and UPS
• RoHs Compliant
tm
D
G DS
TO-220
FDP Series
MOSFET Maximum Ratings TC = 25°C unless otherwise noted*
Symbol
VDSS
VGSS
ID
IDM
EAS
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Drain Current
-Continuous (TC = 25oC)
-Continuous (TC = 100oC)
-Continuous (TA = 25oC)
- Pulsed
Single Pulsed Avalanche Energy
(Note 1)
Power Dissipation
(TC = 25oC)
- Derate above
25oC
TJ, TSTG
Operating and Storage Temperature Range
*Drain current limited by package
Thermal Characteristics
RθJC
RθJA
RθJA
Thermal Resistance , Junction to Case
Thermal Resistance , Junction to Ambient, 1in2 copper pad area
Thermal Resistance , Junction to Ambient
Package Marking and Ordering Information
Device Marking
FDP5800
Device
FDP5800
Package
TO220
Reel Size
--
G
S
Ratings
60
±20
80
80*
14
320
652
242
1.61
-55 to +175
Units
V
V
A
A
A
A
mJ
W
W/°C
°C
0.62 °C/W
43 °C/W
62.5 °C/W
Tape Width
--
Quantity
50
©2006 Fairchild Semiconductor Corporation
FDP5800 Rev. A
1
www.fairchildsemi.com
1 page  
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDP5800 Rev. A
5 www.fairchildsemi.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet FDP5800.PDF ] | |
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