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PDF MAC8N Data sheet ( Hoja de datos )
| Número de pieza | MAC8N | |
| Descripción | (MAC8x) Triacs Silicon Bidirectional Thyristors | |
| Fabricantes | ON Semiconductor | |
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MAC8D, MAC8M, MAC8N
Triacs
Preferred Device
Silicon Bidirectional Thyristors
Designed for high performance full-wave ac control applications
where high noise immunity and high commutating di/dt are required.
Features
• Blocking Voltage to 800 Volts
• On-State Current Rating of 8.0 Amperes RMS at 100°C
• Uniform Gate Trigger Currents in Three Quadrants
• High Immunity to dv/dt − 250 V/ms minimum at 125°C
• Minimizes Snubber Networks for Protection
• Industry Standard TO-220AB Package
• High Commutating di/dt − 6.5 A/ms minimum at 125°C
• Pb−Free Packages are Available*
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol Value
Peak Repetitive Off−State Voltage, (Note 1)
(TJ = −40 to 125°C, Sine Wave,
50 to 60 Hz, Gate Open)
MAC8D
MAC8M
MAC8N
VDRM,
VRRM
400
600
800
Unit
V
On-State RMS Current,
IT(RMS)
(Full Cycle Sine Wave, 60 Hz, TC = 100°C)
8.0
A
Peak Non-Repetitive Surge Current
(One Full Cycle Sine Wave,
60 Hz, TJ = 125°C)
Circuit Fusing Consideration (t = 8.3 ms)
ITSM
I2t
80 A
26 A2s
Peak Gate Power
(Pulse Width ≤ 1.0 ms, TC = 80°C)
PGM 16 W
Average Gate Power
(t = 8.3 ms, TC = 80°C)
PG(AV)
0.35
W
Operating Junction Temperature Range
TJ −40 to +125 °C
Storage Temperature Range
Tstg −40 to +150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2005
December, 2005 − Rev. 5
1
http://onsemi.com
TRIACS
8 AMPERES RMS
400 thru 800 VOLTS
MT2
MT1
G
MARKING
DIAGRAM
123
TO−220AB
CASE 221A−09
STYLE 4
MAC18xG
AYWW
x = D, M, or N
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
Device
MAC8D
MAC8DG
MAC8M
MAC8MG
MAC8N
Package
TO−220AB
TO−220AB
(Pb−Free)
TO−220AB
TO−220AB
(Pb−Free)
TO−220AB
Shipping
50 Units / Rail
50 Units / Rail
50 Units / Rail
50 Units / Rail
50 Units / Rail
MAC8NG
TO−220AB
(Pb−Free)
50 Units / Rail
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MAC8D/D
1 page  
MAC8D, MAC8M, MAC8N
100
Q2
Q1
10
Q3
1
−50 −30 −10 10 30 50 70 90 110 130
TJ, JUNCTION TEMPERATURE (°C)
Figure 6. Gate Trigger Current Variation
1
0.95
0.9
0.85
0.8
075
0.7
0.65
0.6
0.55
0.5
0.45
0.4
−50
Q2
Q3
Q1
−30 − 10 10 30 50 70 90
TJ, JUNCTION TEMPERATURE (°C)
110
Figure 7. Gate Trigger Voltage Variation
130
5000
4.5K
4K
3.5K
3K
2.5K
2K
1.5K
1K
500
0
1
MT2 NEGATIVE
MT2 POSITIVE
10 100
RG, GATE TO MAIN TERMINAL 1 RESISTANCE (OHMS)
Figure 8. Critical Rate of Rise of Off-State
Voltage (Exponential)
1000
100
TJ = 125°C
10
100°C
75°C
tw
VDRM
1
f=
2 tw
(di/dt)c
=
6f ITM
1000
1
10 15 20 25 30 35 40 45 50 55 60
(di/dt)c, RATE OF CHANGE OF COMMUTATING CURRENT (A/ms)
Figure 9. Critical Rate of Rise of
Commutating Voltage
200 VRMS
ADJUST FOR
ITM, 60 Hz VAC
TRIGGER
CHARGE
CHARGE
CONTROL
NON-POLAR
CL
LL
MEASURE
I
MT2
1N914 51 W
G
MT1
1N4007
−
200 V
+
Note: Component values are for verification of rated (di/dt)c. See AN1048 for additional information.
Figure 10. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)
http://onsemi.com
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MAC8N.PDF ] | |
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