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PDF MAC212A8 Data sheet ( Hoja de datos )
| Número de pieza | MAC212A8 | |
| Descripción | (MAC212A8 / MAC212A10) Triacs Silicon Bidirectional Thyristors | |
| Fabricantes | ON Semiconductor | |
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MAC212A8, MAC212A10
Triacs
Preferred Device
Silicon Bidirectional Thyristors
Designed primarily for full-wave ac control applications, such as
light dimmers, motor controls, heating controls and power supplies; or
wherever full-wave silicon gate controlled solid-state devices are
needed. Triac type thyristors switch from a blocking to a conducting
state for either polarity of applied anode voltage with positive or
negative gate triggering.
Features
• Blocking Voltage to 800 Volts
• All Diffused and Glass Passivated Junctions for Greater Parameter
Uniformity and Stability
• Small, Rugged, Thermowatt Construction for Low Thermal
Resistance, High Heat Dissipation and Durability
• Gate Triggering Guaranteed in Four Modes
• Pb−Free Packages are Available*
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Peak Repetitive Off−State Voltage (Note 1)
(TJ = −40 to +125°C, Sine Wave 50 to 60 Hz,
Gate Open)
MAC212A8
MAC212A10
VDRM,
VRRM
600
800
Unit
V
On-State RMS Current (TC = +85°C)
Full Cycle Sine Wave 50 to 60 Hz
IT(RMS)
12
A
Peak Non−repetitive Surge Current (One
Full Cycle Sine Wave, 60 Hz, TC = +25°C)
Preceded and followed by rated current
Circuit Fusing Considerations (t = 8.3 ms)
ITSM
I2t
100 A
40 A2s
Peak Gate Power
(TC = +85°C, Pulse Width = 10 ms)
PGM 20 W
Average Gate Power
(TC = +85°C, t = 8.3 ms)
PG(AV)
0.35
W
Peak Gate Current
(TC = +85°C, Pulse Width = 10 ms)
IGM 2.0 A
Operating Junction Temperature Range
TJ −40 to +125 °C
Storage Temperature Range
Tstg −40 to +150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2005
December, 2005 − Rev. 2
1
http://onsemi.com
TRIACS
12 AMPERES RMS
600 thru 800 VOLTS
MT2
MT1
G
MARKING
DIAGRAM
1
23
MAC212AxG
AYWW
TO−220AB
CASE 221A−07
STYLE 4
x = 8 or 10
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
PIN ASSIGNMENT
1 Main Terminal 1
2 Main Terminal 2
3 Gate
4 Main Terminal 2
ORDERING INFORMATION
Device
Package
Shipping
MAC212A8D
MAC212A8DG
MAC212A10
MAC212A10G
TO−220AB
TO−220AB
(Pb−Free)
TO−220AB
TO−220AB
(Pb−Free)
500 Units / Box
500 Units / Box
500 Units / Box
500 Units / Box
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MAC212A8/D
1 page  
MAC212A8, MAC212A10
2.0
1.6
MAIN TERMINAL VOLTAGE = 12 Vdc
ALL QUADRANTS
1.2
0.8
0.4
0
−60 −40 −20 0 20 40 60 80
TC, CASE TEMPERATURE (°C)
Figure 6. Typical Gate Trigger Current
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
−60
MAIN TERMINAL VOLTAGE = 12 Vdc
ALL QUADRANTS
−40 −20
0
20 40 60
TC, CASE TEMPERATURE (°C)
Figure 7. Typical Holding Current
80
1.0
0.5
0.2
0.1
0.05
0.02
0.01
0.1
0.2
0.5 1.0 2.0
ZqJC(t) = r(t) • RqJC
5.0 20 50 100 200
t, TIME (ms)
Figure 8. Thermal Response
500 1.0 k 2.0 k
5.0 k 10 k
http://onsemi.com
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| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MAC212A8.PDF ] | |
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