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PDF MAC210A10 Data sheet ( Hoja de datos )
| Número de pieza | MAC210A10 | |
| Descripción | (MAC210A8 / MAC210A10) Triacs Silicon Bidirectional Thyristors | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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MAC210A8, MAC210A10
Triacs
Silicon Bidirectional Thyristors
Designed primarily for full-wave AC control applications, such as
light dimmers, motor controls, heating controls and power supplies; or
wherever full−wave silicon gate controlled solid−state devices are
needed. Triac type thyristors switch from a blocking to a conducting
state for either polarity of applied main terminal voltage with positive
or negative gate triggering.
Features
• Blocking Voltage to 600 Volts
• All Diffused and Glass Passivated Junctions for Greater Parameter
Uniformity and Stability
• Small, Rugged, Thermowatt Construction for Low Thermal
Resistance, High Heat Dissipation and Durability
• Gate Triggering Guaranteed in Four Modes (Quadrants)
• Pb−Free Packages are Available*
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Peak Repetitive Off−State Voltage (Note 1)
(TJ = −40 to +125°C, Sine Wave 50 to 60 Hz,
Gate Open)
MAC210A8
MAC210A10
VDRM,
VRRM
600
800
V
On−State RMS Current (TC = +70°C)
Full Cycle Sine Wave 50 to 60 Hz
IT(RMS)
10
A
Peak Non−Repetitive Surge Current
(One Full Cycle, Sine Wave 60 Hz,
TC = +25°C)
Preceded and followed by rated current
Circuit Fusing Considerations, (t = 8.3 ms)
ITSM
I2t
100 A
40 A2s
Peak Gate Power
(TC = +70°C, Pulse Width = 10 ms)
PGM
20 W
Average Gate Power
(TC = +70°C, t = 8.3 ms)
PG(AV)
0.35
W
Peak Gate Current
(TC = +70°C, Pulse Width = 10 ms)
IGM 2.0 A
Operating Junction Temperature Range
TJ −40 to +125 °C
Storage Temperature Range
Tstg −40 to +150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2005
December, 2005 − Rev. 2
1
http://onsemi.com
TRIACS
10 AMPERES RMS
600 thru 800 VOLTS
MT2
MT1
G
MARKING
DIAGRAM
1
23
MAC210AxG
AYWW
TO−220AB
CASE 221A−07
STYLE 4
x = 8 or 10
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
PIN ASSIGNMENT
1 Main Terminal 1
2 Main Terminal 2
3 Gate
4 Main Terminal 2
ORDERING INFORMATION
Device
Package
Shipping
MAC210A8
TO−220AB
500 Units/Box
MAC210A8G
TO−220AB
(Pb−Free)
500 Units/Box
MAC210A10
MAC210A10G
TO−220AB
TO−220AB
(Pb−Free)
500 Units/Box
500 Units/Box
Publication Order Number:
MAC210A8/D
1 page  
MAC210A8, MAC210A10
2.0
1.6 OFF-STATE VOLTAGE = 12 Vdc
ALL MODES
1.2
0.8
0.4
0
−60 −40 −20 0 20 40
TC, CASE TEMPERATURE (°C)
60
Figure 6. Typical Gate Trigger Current
80
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
−60
OFF-STATE VOLTAGE = 12 Vdc
ALL MODES
−40 −20 0 20 40 60
TC, CASE TEMPERATURE (°C)
Figure 7. Typical Holding Current
80
1.0
0.5
0.2
0.1
0.05
0.02
0.01
0.1
0.2
0.5 1.0 2.0
ZqJC(t) = r(t) • RqJC
5.0 20 50 100 200
t, TIME (ms)
Figure 8. Thermal Response
500 1.0 k 2.0 k
5.0 k 10 k
http://onsemi.com
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MAC210A10.PDF ] | |
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