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PDF MAC16D Data sheet ( Hoja de datos )

Número de pieza MAC16D
Descripción (MAC16x) Triacs Silicon Bidirectional Thyristors
Fabricantes ON Semiconductor 
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MAC16D, MAC16M, MAC16N
Triacs
Preferred Device
Silicon Bidirectional Thyristors
Designed for high performance full-wave ac control applications
where high noise immunity and high commutating di/dt are required.
Features
Blocking Voltage to 800 Volts
On-State Current Rating of 16 Amperes RMS at 80°C
Uniform Gate Trigger Currents in Three Quadrants
High Immunity to dv/dt − 500 V/ms minimum at 125°C
Minimizes Snubber Networks for Protection
Industry Standard TO-220AB Package
High Commutating di/dt − 9.0 A/ms minimum at 125°C
Pb−Free Packages are Available*
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Peak Repetitive Off−State Voltage (Note 1)
(TJ = −40 to 125°C, Sine Wave,
50 to 60 Hz, Gate Open)
MAC16D
MAC16M
MAC16N
VDRM,
VRRM
400
600
800
V
On-State RMS Current
IT(RMS)
(Full Cycle Sine Wave, 60 Hz, TC = 80°C)
16
A
Peak Non-Repetitive Surge Current
(One Full Cycle Sine Wave, 60 Hz,
TJ = 125°C)
Circuit Fusing Consideration (t = 8.3 ms)
ITSM
I2t
150 A
93 A2sec
Peak Gate Power
(Pulse Width 1.0 ms, TC = 80°C)
PGM 20 W
Average Gate Power
(t = 8.3 ms, TC = 80°C)
PG(AV)
0.5
W
Operating Junction Temperature Range
TJ −40 to +125 °C
Storage Temperature Range
Tstg −40 to +150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2005
December, 2005 − Rev. 3
1
http://onsemi.com
TRIACS
16 AMPERES RMS
400 thru 800 VOLTS
MT2
MT1
G
MARKING
DIAGRAM
1
23
TO−220AB
CASE 221A−09
STYLE 4
MAC16xG
AYWW
x = D, M, or N
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
PIN ASSIGNMENT
1 Main Terminal 1
2 Main Terminal 2
3 Gate
4 Main Terminal 2
ORDERING INFORMATION
Device
Package
Shipping
MAC16D
TO−220AB
50 Units / Rail
MAC16DG
MAC16M
TO−220AB
(Pb−Free)
TO−220AB
50 Units / Rail
50 Units / Rail
MAC16MG
MAC16N
TO−220AB
(Pb−Free)
TO−220AB
50 Units / Rail
50 Units / Rail
MAC16NG
TO−220AB
(Pb−Free)
50 Units / Rail
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MAC16D/D

1 page




MAC16D pdf
MAC16D, MAC16M, MAC16N
100
Q2
Q3
Q1
1
VD = 12 V
RL = 100 W
Q1
Q3
Q2
VD = 12 V
RL = 100 W
1
−40 −10 20 50 80
TJ, JUNCTION TEMPERATURE (°C)
110 125
Figure 6. Gate Trigger Current Variation
0.5−40
−10 +20 50
80
TJ, JUNCTION TEMPERATURE (°C)
110 125
Figure 7. Gate Trigger Voltage Variation
5000 100
VD = 800 Vpk
4K TJ = 125°C
3K
2K
1K
0
10 100 1000 10000
RG, GATE TO MAIN TERMINAL 1 RESISTANCE (OHMS)
Figure 8. Critical Rate of Rise of Off-State Voltage
(Exponential Waveform)
TJ = 125°C
10
100°C
75°C
1
10 20 30
ITM
tw
VDRM
1
f=
2 tw
(di/dt)c
=
6f ITM
1000
40 50 60 70
80 90 100
(di/dt)c, RATE OF CHANGE OF COMMUTATING CURRENT (A/ms)
Figure 9. Critical Rate of Rise of
Commutating Voltage
200 VRMS
ADJUST FOR
ITM, 60 Hz VAC
TRIGGER
CHARGE
CHARGE
CONTROL
NON-POLAR
CL
LL
MEASURE
I
MT2
1N914 51 W
G
MT1
1N4007
200 V
+
Note: Component values are for verification of rated (di/dt)c. See AN1048 for additional information.
Figure 10. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)c
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