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Número de pieza | IRL3803VL | |
Descripción | (IRL3803Vx) HEXFET Power MOSFET | |
Fabricantes | International Rectifier | |
Logotipo | ||
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l Logic-Level Gate Drive
l Advanced Process Technology
l Surface Mount (IRL3803VS)
l Low-profile through-hole (IRL3803VL)
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
G
Description
Advanced HEXFET® Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve extremely low on-
resistance per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of applications.
PD - 94735
IRL3803VS
IRL3803VL
HEXFET® Power MOSFET
D
VDSS = 30V
RDS(on) = 5.5mΩ
ID = 140A
S
The D2Pak is a surface mount power package capable of accommodating
die sizes up to HEX-4. It provides the highest power capability and the lowest
possible on-resistance in any existing surface mount package. The D2Pak
is suitable for high current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface mount
application.
D2Pak
IRL3803VS
TO-262
IRL3803VL
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
VGS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient (PCB Mounted, steady state)
Max.
140
110
470
3.8
200
1.4
± 16
71
20
5.0
-55 to + 175
300 (1.6mm from case )
Typ.
–––
–––
Max.
0.74
40
Units
A
W
W
W/°C
V
A
mJ
V/ns
Units
°C/W
www.irf.com
1
07/21/03
1 page IRL3803VS/IRL3803VL
160
LIMITED BY PACKAGE
120
80
40
0
25 50 75 100 125 150 175
TC , Case Temperature ( °C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
1
VDS
VGS
RG
RD
D.U.T.
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
D = 0.50
0.20
0.1 0.10
0.05
0.02
0.01
0.01
0.00001
PDM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
0.0001
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
0.1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet IRL3803VL.PDF ] |
Número de pieza | Descripción | Fabricantes |
IRL3803V | Power MOSFET ( Transistor ) | International Rectifier |
IRL3803VL | (IRL3803Vx) HEXFET Power MOSFET | International Rectifier |
IRL3803VLPbF | Power MOSFET ( Transistor ) | International Rectifier |
IRL3803VPBF | HEXFET Power MOSFET | International Rectifier |
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