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PDF FDP14N30 Data sheet ( Hoja de datos )
| Número de pieza | FDP14N30 | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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FDP14N30 / FDPF14N30
300V N-Channel MOSFET
Features
• 14A, 300V, RDS(on) = 0.29Ω @VGS = 10 V
• Low gate charge ( typical 18 nC)
• Low Crss ( typical 17 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
February 2007
UniFETTM
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
D
GDS
TO-220
FDP Series
GD S
TO-220F
FDPF Series
G
S
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
* Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
FDP14N30 FDPF14N30
300
14 14 *
8.4 8.4 ∗
56 56 ∗
±30
330
14
14
4.5
140 35
1.12 0.28
-55 to +150
300
FDP14N30
0.89
0.5
62.5
FDPF14N30
3.56
--
62.5
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
°C/W
°C/W
©2007 Fairchild Semiconductor Corporation
FDP14N30 / FDPF14N30 Rev. A
1
www.fairchildsemi.com
1 page  
Typical Performance Characteristics (Continued)
Figure 11-1. Transient Thermal Response Curve - FDP14N30
100
D =0.5
1 0 -1
1 0 -2
0 .2
0 .1
0 .0 5
0 .0 2
0 .0 1
single pulse
PDM
t1
t2
* N otes :
1. Z θJC(t) = 0.89 oC /W M ax.
2. D u ty F a c to r, D = t1/t2
3. T JM - T C = P DM * Z θJC(t)
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t1, S q u are W a ve P ulse D u ra tio n [se c]
101
Figure 11-2. Transient Thermal Response Curve - FDPF14N30
101
D =0.5
100 0.2
0 .1
0 .0 5
1 0 -1
0 .0 2
0 .0 1
1 0 -2 s in g le p u ls e
PDM
t1
t2
* N otes :
1. Z θJC(t) = 3.56 oC /W M ax.
2. D u ty F a c to r, D = t1/t2
3. T JM - T C = P DM * Z θJC(t)
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t1, S q u are W a ve P ulse D u ra tio n [se c]
101
FDP14N30 / FDPF14N30 Rev. A
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet FDP14N30.PDF ] | |
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