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PDF BAS19LT1 Data sheet ( Hoja de datos )
| Número de pieza | BAS19LT1 | |
| Descripción | High Voltage Switching Diode | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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MOTOROLA
www.DataSheet4U.com
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BAS19LT1/D
High Voltage Switching Diode
3
CATHODE
1
ANODE
BAS19LT1
Motorola Preferred Device
MAXIMUM RATINGS
Rating
Continuous Reverse Voltage
Peak Forward Current
Peak Forward Surge Current
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
BAS19LT1 = JP
Symbol
VR
IF
IFM(surge)
Value
120
200
625
Symbol
PD
Rq JA
PD
Rq JA
TJ, Tstg
Max
225
1.8
556
300
2.4
417
– 55 to +150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Reverse Voltage Leakage Current
(VR = 100 Vdc)
(VR = 100 Vdc, TJ = 150°C)
Reverse Breakdown Voltage
(IBR = 100 µAdc)
Forward Voltage
(IF = 100 mAdc)
(IF = 200 mAdc)
Diode Capacitance
(VR = 0, f = 1.0 MHz)
Reverse Recovery Time
(IF = IR = 30 mAdc, RL = 100 Ω)
1. FR– 5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
Unit
Vdc
mAdc
mAdc
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Symbol
IR
V(BR)
VF
CD
trr
3
1
2
CASE 318 – 08, STYLE 8
SOT– 23 (TO – 236AB)
Min Max Unit
µAdc
— 0.1
— 100
120 — Vdc
mV
— 1000
— 1250
— 5.0 pF
— 50 ns
Preferred devices are Motorola recommended choices for future use and best overall value.
Thermal Clad is a trademark of the Bergquist Company
©MMotootorroollaa,
Small–Signal
Inc. 1999
Transistors,
FETs
and
Diodes
Device
Data
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet BAS19LT1.PDF ] | |
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