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PDF IRF7322D1PBF Data sheet ( Hoja de datos )
| Número de pieza | IRF7322D1PBF | |
| Descripción | FETKY MOSFET / Schottky Diode | |
| Fabricantes | International Rectifier | |
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PD - 95298
IRF7322D1PbF
FETKYä MOSFET / Schottky Diode
l Co-packaged HEXFET® Power MOSFET
and Schottky Diode
l Ideal For Buck Regulator Applications
l P-Channel HEXFET
l Low VF Schottky Rectifier
l Generation 5 Technology
l SO-8 Footprint
l Lead-Free
A
A
S
G
1
8K
VDSS = -20V
2 7K
3
6D
RDS(on) = 0.058Ω
4 5 D Schottky Vf = 0.39V
Top View
Description
The FETKY family of co-packaged MOSFETs and Schottky diodes offers the
designer an innovative, board space saving solution for switching regulator
and power management applications. Generation 5 HEXFET Power
MOSFETs utilize advanced processing techniques to achieve extremely low
on-resistance per silicon area. Combinining this technology with
International Rectifier's low forward drop Schottky rectifiers results in an
extremely efficient device suitable for use in a wide variety of portable
electronics applications.
The SO-8 has been modified through a customized leadframe for
enhanced thermal characteristics. The SO-8 package is designed for vapor
phase, infrared or wave soldering techniques.
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Parameter
Maximum
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current À
Power Dissipation
Linear Derating Factor
-5.3
-4.3
-43
2.0
1.3
16
VGS
dv/dt
Gate-to-Source Voltage
Peak Diode Recovery dv/dt Á
± 12
-5.0
TJ, TSTG
Junction and Storage Temperature Range
-55 to +150
Thermal Resistance Ratings
SO-8
Units
A
W
mW/°C
V
V/ns
°C
Parameter
RθJA
Junction-to-Ambient Ã
Maximum
62.5
Units
°C/W
Notes:
À Repetitive rating; pulse width limited by maximum junction temperature (see figure 9)
Á ISD ≤ -2.9A, di/dt ≤ -77A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
 Pulse width ≤ 300µs; duty cycle ≤ 2%
à Surface mounted on FR-4 board, t ≤ 10sec.
www.irf.com
1
10/12/04
1 page  
IRF7322D1PbF
Power Mosfet Characteristics
100
0.50
0.20
10
0.10
0.05
0.02
1 0.01
0.1
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
0.001
PDM
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.01 0.1
1
t1, Rectangular Pulse Duration (sec)
10
Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
100
0.8 0.08
0.07
0.6
VGS = -2.7V
0.06
0.4
0.05
I D = -5.3A
0.2
0.0
0
VGS = -4.5V
A
4 8 12 16 20
-I D , Drain Current (A)
0.04
0.03
0.0
2.0 4.0 6.0
VGS , Gate-to-Source Voltage (V)
A
8.0
Fig 10. Typical On-Resistance Vs. Drain
Current
www.irf.com
Fig 11. Typical On-Resistance Vs. Gate
Voltage
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRF7322D1PBF.PDF ] | |
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