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PDF IRFSL4321PBF Data sheet ( Hoja de datos )
| Número de pieza | IRFSL4321PBF | |
| Descripción | HEXFET Power MOSFET | |
| Fabricantes | International Rectifier | |
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PD - 97105B
IRFS4321PbF
IRFSL4321PbF
Applications
l Motion Control Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l Hard Switched and High Frequency Circuits
Benefits
l Low RDSON Reduces Losses
l Low Gate Charge Improves the Switching
Performance
l Improved Diode Recovery Improves Switching &
EMI Performance
l 30V Gate Voltage Rating Improves Robustness
l Fully Characterized Avalanche SOA
VDSS
RDS(on)
ID
typ.
max.
D
G
S
HEXFET® Power MOSFET
150V
12m:
15m:
85A c
DD
S
D
G
S
GD
D2Pak
TO-262
IRFS4321PbF IRFSL4321PbF
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current d
Maximum Power Dissipation
Linear Derating Factor
VGS
EAS (Thermally limited)
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy e
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Thermal Resistance
Parameter
RθJC Junction-to-Case g
RθJA Junction-to-Ambient g
Max.
85 c
60
330
350
2.3
±30
120
-55 to + 175
300
Typ.
–––
–––
Max.
0.43*
40
Units
A
W
W/°C
V
mJ
°C
Units
°C/W
* RθJC (end of life) for D2Pak and TO-262 = 0.65°C/W. This is the maximum measured value after 1000 temperature
cycles from -55 to 150°C and is accounted for by the physical wearout of the die attach medium.
Notes through
are on page 2
www.irf.com
1
1/26/10
1 page  
IRFS_SL4321PbF
1
D = 0.50
0.1 0.20
0.10
0.05
0.02
0.01 0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
τJ τJ
τ1 τ1
R1R1
CiC= iτ=i/τRi/iRi
R2R2
τ2 τ2
R3R3 Ri (°C/W) τι (sec)
τCτ 0.085239 0.000052
τ3τ3 0.18817 0.00098
0.176912 0.008365
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
100
Duty Cycle = Single Pulse
0.01
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔTj = 150°C and
Tstart =25°C (Single Pulse)
10 0.05
0.10
Allowed avalanche Current vs avalanche
1 pulsewidth, tav, assuming ΔΤ j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
tav (sec)
Fig 14. Typical Avalanche Current vs.Pulsewidth
1.0E-02
1.0E-01
120
TOP
Single Pulse
BOTTOM 1% Duty Cycle
100 ID = 50A
80
60
40
20
0
25
50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. ΔT = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 15. Maximum Avalanche Energy vs. Temperature
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