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PDF IRF511 Datasheet ( Hoja de datos )

Número de pieza IRF511
Descripción (IRF510 - IRF513) N-Channel Power MOSFETs
Fabricantes Harris Corporation 
Logotipo Harris Corporation Logotipo

Total 7 Páginas
		
IRF511 Hoja de datos, Descripción, Manual
Semiconductor
January 1998
www.DataSheet4U.com
IRF510, IRF511,
IRF512, IRF513
4.9A, and 5.6A, 80V and 100V, 0.54 and 0.74 Ohm,
N-Channel Power MOSFETs
Features
• 4.9A, and 5.6A, 80V and 100V
• rDS(ON) = 0.54and 0.74
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRF510
TO-220AB
IRF510
IRF511
TO-220AB
IRF511
IRF512
TO-220AB
IRF512
IRF513
TO-220AB
IRF513
NOTE: When ordering, include the entire part number.
Description
These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching conver-
tors, motor drivers, relay drivers, and drivers for high power
bipolar switching transistors requiring high speed and low
gate drive power. These types can be operated directly from
integrated circuits.
Formerly developmental type TA17441.
Symbol
D
G
S
Packaging
JEDEC TO-220AB
SOURCE
DRAIN
GATE
DRAIN (FLANGE)
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 1997
5-1
File Number 1573.2

1 page

IRF511 pdf
IRF510, IRF511, IRF512, IRF513
Typical Performance Curves Unless Otherwise Specified (Continued)
10
80µs PULSE TEST
8
6
VGS = 10V
VGS = 8V
VGS = 7V
4
VGS = 6V
2
VGS = 5V
VGS = 4V
0
0 2 4 6 8 10
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 6. SATURATION CHARACTERISTICS
10
VDS 50V
80µs PULSE TEST
1
TJ = 175oC
0.1
TJ = 25oC
10-2
0
246
8
VGS, GATE TO SOURCE VOLTAGE (V)
FIGURE 7. TRANSFER CHARACTERISTICS
10
5.0
80µs PULSE TEST
4.0
3.0
ID = 3.4A
VGS = 10V
2.4
3.0 1.8
2.0 1.2
VGS = 10V
VGS = 20V
1.0 0.6
0
0 4 8 12 16 20
ID, DRAIN CURRENT (A)
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
1.25
ID = 250µA
1.15
1.05
500
VGS = 0V, f = 1MHz
CISS = CGS + CGD
400 CRSS = CGD
COSS CDS + CGD
300
0.95
0.85
0.75
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
200 CISS
COSS
100
0
1
CRSS
2 5 10 2 5
VDS, DRAIN TO SOURCE VOLTAGE (V)
102
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
5-5

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