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PDF IRF511 Datasheet ( Hoja de datos )

Número de pieza IRF511
Descripción (IRF510 - IRF513) N-Channel Power MOSFETs
Fabricantes Harris Corporation 
Logotipo Harris Corporation Logotipo
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IRF511 datasheet

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IRF511 pdf
IRF510, IRF511, IRF512, IRF513
Typical Performance Curves Unless Otherwise Specified (Continued)
10
80µs PULSE TEST
8
6
VGS = 10V
VGS = 8V
VGS = 7V
4
VGS = 6V
2
VGS = 5V
VGS = 4V
0
0 2 4 6 8 10
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 6. SATURATION CHARACTERISTICS
10
VDS 50V
80µs PULSE TEST
1
TJ = 175oC
0.1
TJ = 25oC
10-2
0
246
8
VGS, GATE TO SOURCE VOLTAGE (V)
FIGURE 7. TRANSFER CHARACTERISTICS
10
5.0
80µs PULSE TEST
4.0
3.0
ID = 3.4A
VGS = 10V
2.4
3.0 1.8
2.0 1.2
VGS = 10V
VGS = 20V
1.0 0.6
0
0 4 8 12 16 20
ID, DRAIN CURRENT (A)
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
1.25
ID = 250µA
1.15
1.05
500
VGS = 0V, f = 1MHz
CISS = CGS + CGD
400 CRSS = CGD
COSS CDS + CGD
300
0.95
0.85
0.75
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
200 CISS
COSS
100
0
1
CRSS
2 5 10 2 5
VDS, DRAIN TO SOURCE VOLTAGE (V)
102
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
5-5

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