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PDF STP100NF04 Data sheet ( Hoja de datos )
| Número de pieza | STP100NF04 | |
| Descripción | N-channel Power MOSFET | |
| Fabricantes | ST Microelectronics | |
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STP100NF04
STB100NF04
N-channel 40V - 0.0043Ω - 120A - TO-220 - D2PAK
STripFET™ II Power MOSFET
General features
Type
STP100NF04
STB100NF04
VDSS
40V
40V
RDS(on)
< 0.0046Ω
< 0.0046Ω
ID
120A
120A
Pw
300W
300W
■ Standard threshold drive
■ 100% avalanche tested
Description
This Power MOSFET is the latest development of
STMicroelectronics unique “Single Feature
Size™” strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.
Applications
■ Switching application
3
1
D²PAK
3
2
1
TO-220
Internal schematic diagram
Order codes
Part number
STB100NF04
STP100NF04
Marking
B100NF04
P100NF04
Package
D²PAK
TO-220
Packaging
Tape & Reel
Tube
February 2007
Rev 5
1/17
www.st.com
17
1 page  
STB100NF04 - STP100NF04
Electrical characteristics
Table 5. Source drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
ISD
ISDM(1)
VSD(2)
Source-drain Current
Source-drain Current (pulsed)
Forward on Voltage
ISD=120A, VGS=0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse recovery Current
ISD=120A, VDD=20V,
di/dt=100A/µs, Tj=150°C
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
120 A
480 A
1.3 V
75 ns
185 nC
5A
5/17
5 Page 
STB100NF04 - STP100NF04
3 Test circuit
Test circuit
Figure 19. Unclamped inductive load test
circuit
Figure 20. Unclamped inductive waveform
Figure 21. Switching times test circuit for
resistive load
Figure 22. Gate charge test circuit
Figure 23. Test circuit for inductive load
switching
Figure 24. Switching time waveform
11/17
11 Page | ||
| Páginas | Total 17 Páginas | |
| PDF Descargar | [ Datasheet STP100NF04.PDF ] | |
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