|
|
PDF 2N6285 Data sheet ( Hoja de datos )
| Número de pieza | 2N6285 | |
| Descripción | (2N6282 - 2N6287) DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de 2N6285 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
|
No Preview Available !
www.DataSheet4U.com
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Darlington Complementary
Silicon Power Transistors
. . . designed for general–purpose amplifier and low–frequency switching applica-
tions.
• High DC Current Gain @ IC = 10 Adc —
hFE = 2400 (Typ) — 2N6282, 2N6283, 2N6284
hFE = 4000 (Typ) — 2N6285, 2N6286, 2N6287
• Collector–Emitter Sustaining Voltage —
VCEO(sus) = 60 Vdc (Min) — 2N6282, 2N6285
VCEO(sus) = 80 Vdc (Min) — 2N6283, 2N6286
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVCEO(sus) = 100 Vdc (Min) — 2N6284, 2N6287
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΕ Monolithic Construction with Built–In Base–Emitter Shunt Resistors
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ*MAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current — Continuous
Peak
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Device Dissipation @ TC = 25_C
Derate above 25_ C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTemperature Range
2N6282 2N6283 2N6284
Symbol 2N6285 2N6286 2N6287
VCEO
VCB
VEB
IC
60
60
80 100
80 100
5.0
20
40
IB 0.5
PD 160
0.915
TJ,Tstg
– 65 to + 200
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/_ C
_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ*THERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermalResistance, Junction to Case
Symbol
RθJC
Max
1.09
Unit
_ C/W
* Indicates JEDEC Registered Data.
160
140
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175 200
TC, CASE TEMPERATURE (°C)
Figure 1. Power Derating
Preferred devices are Motorola recommended choices for future use and best overall value.
©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data
Order this document
by 2N6282/D
NPN
2N6282
thru
2N6284
PNP
2N6285
*
thru
2N6287 *
*Motorola Preferred Device
DARLINGTON
20 AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
60, 80, 100 VOLTS
160 WATTS
CASE 1–07
TO–204AA
(TO–3)
1
1 page  
NPN
2N6282, 2N6283, 2N6284
2N6282 thru 2N6284 2N6285 thru 2N6287
PNP
2N6285, 2N6286, 2N6287
+ 5.0
++ 4.0
+ 3.0
*APPLIES FOR IC/IB ≤
hFE @ VCE
250
3.0 V
+ 5.0
++ 4.0
+ 3.0
*APPLIES FOR IC/IB ≤
hFE @ VCE
250
3.0 V
+ 2.0 25°C to 150°C
+ 1.0
0 – 55°C to + 25°C
+ 2.0 25°C to 150°C
+ 1.0 – 55°C to + 25°C
0
– 1.0 *θVC for VCE(sat)
– 2.0
– 3.0 θVB for VBE
25°C to + 150°C
– 4.0
– 5.0
0.2 0.3 0.5 0.7 1.0
2.0 3.0
– 55°C to + 25°C
5.0 7.0 10
20
– 1.0 *θVC for VCE(sat)
– 2.0
25°C to + 150°C
– 3.0 θVB for VBE
– 4.0
– 5.0
0.2 0.3 0.5 0.7 1.0
2.0 3.0
– 55°C to + 25°C
5.0 7.0 10
20
IC, COLLECTOR CURRENT (AMP)
IC, COLLECTOR CURRENT (AMP)
Figure 13. Temperature Coefficients
105 103
104 VCE = 30 V
103
TJ = 150°C
102
100°C
VCE = 30 V
102
TJ = 150°C
101
100 100°C
101
REVERSE
FORWARD
10–1
REVERSE
FORWARD
100
25°C
10–1
– 0.6 – 0.4 – 0.2 0 + 0.2 + 0.4 + 0.6 + 0.8 + 1.0 + 1.2 + 1.4
10–2 25°C
10–3
+ 0.6 + 0.4 + 0.2 0 – 0.2 – 0.4 – 0.6 – 0.8 – 1.0 – 1.2 – 1.4
VBE, BASE–EMITTER VOLTAGE (VOLTS)
VBE, BASE–EMITTER VOLTAGE (VOLTS)
Figure 14. Collector Cut–Off Region
NPN
2N6282
2N6283
2N6284
BASE
COLLECTOR
[ 8.0 k [ 60
PNP
2N6285
2N6286
2N6287
BASE
COLLECTOR
[ 8.0 k [ 60
EMITTER
Figure 15. Darlington Schematic
EMITTER
Motorola Bipolar Power Transistor Device Data
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet 2N6285.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| 2N628 | Trans GP BJT NPN 30V 7A 3-Pin(3+Tab) TO-220 Box |  New Jersey Semiconductor |
| 2N6282 | POWER TRANSISTORS(20A/160W) |  Mospec Semiconductor |
| 2N6282 | DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS |  ON Semiconductor |
| 2N6282 | DARLINGTON COPLEMENTARY SILICON POWER TRANSISTORS |  Boca Semiconductor Corporation |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |