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PDF 2N5655 Data sheet ( Hoja de datos )
| Número de pieza | 2N5655 | |
| Descripción | (2N5655 - 2N5657) POWER TRANSISTORS NPN SILICON | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2N5655 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by 2N5655/D
Plastic NPN Silicon
High-Voltage Power Transistor
. . . designed for use in line–operated equipment such as audio output amplifiers;
low–current, high–voltage converters; and AC line relays.
• Excellent DC Current Gain — hFE = 30 – 250 @ IC = 100 mAdc
• Current–Gain — Bandwidth Product —
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎfT = 10 MHz (Min) @ IC = 50 mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS (1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
Symbol 2N5655 2N5656 2N5657
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current — Continuous
Peak
VCEO
250
300
350
VCB
275
325
375
VEB
6.0
IC 0.5
1.0
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation @ TC = 25_C
Derate above 25_ C
IB
PD
0.25
20
0.16
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTemperature Range
TJ, Tstg
– 65 to + 150
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/_ C
_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermalResistance, Junction to Case
Symbol
θJC
Max
6.25
Unit
_ C/W
(1) Indicates JEDEC Registered Data.
40
2N5655
2N5656
2N5657
0.5 AMPERE
POWER TRANSISTORS
NPN SILICON
250 – 300 – 350 VOLTS
20 WATTS
CASE 77–08
TO–225AA TYPE
30
50 mH
20 X
200
Hg RELAY
TO SCOPE
++
10
6.0 V 50 V
Y–
0
25 50
75 100 125 150
TC, CASE TEMPERATURE (°C)
Figure 1. Power Derating
300 1.0
Figure 2. Sustaining Voltage Test Circuit
Safe Area Limits are indicated by Figures 3 and 4. Both limits are applicable and must be observed.
REV 3
©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 2N5655.PDF ] | |
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