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PDF FDMA291P Data sheet ( Hoja de datos )

Número de pieza FDMA291P
Descripción Single P-Channel 1.8V Specified PowerTrench MOSFET
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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No Preview Available ! FDMA291P Hoja de datos, Descripción, Manual

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May 2006
May 2006
FDMA291P
Single P-Channel 1.8V Specified PowerTrench® MOSFET
General Description
This device is designed specifically for battery charge
or load switching in cellular handset and other ultra-
portable applications. It features a MOSFET with low
on-state resistance.
The MicroFET 2x2 package offers exceptional thermal
performance for its physical size and is well suited to
linear mode applications.
Drain
Pin 1
Source
Features
–6.6 A, –20V. rDS(ON) = 42 m@ VGS = –4.5V
rDS(ON) = 58 m@ VGS = –2.5V
rDS(ON) = 98 m@ VGS = –1.8V
Low profile – 0.8 mm maximum – in the new package
MicroFET 2x2 mm
Bottom Drain Contact
D1
6D
D2
5D
MicroFET 2x2
G3
4S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDS
VGS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
Power Dissipation for Single Operation
(Note 1a)
PD
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJA Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
291
FDMA291P
7’’
Ratings
–20
±8
–6.6
–24
2.4
0.9
–55 to +150
52
145
Tape width
8mm
Units
V
V
A
W
°C
°C/W
Quantity
3000 units
©2006 Fairchild Semiconductor Corporation
FDMA291P Rev B (W)

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FDMA291P Rev B (W)

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