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PDF FDU8586 Data sheet ( Hoja de datos )

Número de pieza FDU8586
Descripción N-Channel PowerTrench MOSFET
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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No Preview Available ! FDU8586 Hoja de datos, Descripción, Manual

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January 2007
FDD8586/FDU8586
N-Channel PowerTrench® MOSFET
20V, 35A, 5.5m
Features
General Description
tm
„ Max rDS(on) = 5.5mat VGS = 10V, ID = 35A
„ Max rDS(on) = 8.5mat VGS = 4.5V, ID = 33A
„ Low gate charge: Qg(TOT) = 34nC(Typ), VGS = 10V
„ Low gate resistance
„ 100% Avalanche tested
„ RoHS compliant
This N-Channel MOSFET has been designed specifically
to improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
rDS(on) and fast switching speed.
Application
„ Vcore DC-DC for Desktop Computers and Servers
„ VRM for Intermediate Bus Architecture
D
G DS
I-PAK
(TO-251AA)
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDS Drain to Source Voltage
VGS Gate to Source Voltage
Drain Current -Continuous (Package Limited)
ID -Continuous (Die Limited)
-Pulsed
EAS
PD
TJ, TSTG
Single Pulse Avalanche Energy
Power Dissipation
Operating and Storage Temperature
Thermal Characteristics
(Note 1)
(Note 2)
RθJC
Thermal Resistance, Junction to Case TO-252,TO-251
RθJA
RθJA
Thermal Resistance, Junction to Ambient TO-252,TO-251
Thermal Resistance, Junction to Ambient TO-252,1in2 copper pad area
Package Marking and Ordering Information
Device Marking
FDD8586
FDU8586
Device
FDD8586
FDU8586
Package
TO-252AA
TO-251AA
Reel Size
13’’
N/A(Tube)
G
S
Ratings
20
±20
35
93
354
144
77
-55 to 175
Units
V
V
A
mJ
W
°C
1.94 °C/W
100 °C/W
52 °C/W
Tape Width
12mm
N/A
Quantity
2500 units
75 units
©2007 Fairchild Semiconductor Corporation
FDD8586/FDU8586 Rev. B
1
www.fairchildsemi.com

1 page




FDU8586 pdf
Typical Characteristics TJ = 25°C unless otherwise noted
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1
0.05
0.02
0.1 0.01
PDM
0.01
0.005
10-5
SINGLE PULSE
10-4
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
10-3
10-2
10-1
t, RECTANGULAR PULSE DURATION (s)
100
Figure 13. Transient Thermal Response Curve
101
FDD8586/FDU8586 Rev. B
5
www.fairchildsemi.com

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